Authors E. Amat, G. Groeseneken, X. Aymerich, M. Nafría, R. Rodríguez, R. Degraeve, and T. Kauerauf Citation Key 150 COinS Data Journal IEEE Transactions on Device and Materials Reliability, accepted for the publication. Year of Publication 2011 ← Processing dependences of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors → Conductivity and charge trapping after electrical stress in amorphous and polycristaline Al2O3 based devices studied with AFM related techniques