Authors R. Rodríguez, X. Aymerich, J. Suñé, E. Miranda, and M. Nafría Citation Key 263 COinS Data Date Published 2000 Pagination 2138-2145 Journal IEEE Transactions on Electron Devices Volume 47 Year of Publication 2000 ← Monitoring the degradation that causes the breakdown of ultrathin (<5nm) SiO2 gate oxides → Modeling the breakdown spots in silicon dioxide films as point contacts