Authors A. Bayerl, S. De Gendt, X. Aymerich, M. Nafría, M. Porti, L. Aguilera, and M. Lanza Citation Key 314 COinS Data Journal Microelectronics Engineering Year of Publication 2011 ← Reliability and Gate Conduction Variability of HfO2-based MOS Devices: a Combined Nanoscale and Devices Level Study → Nanoscale and device level gate conduction variability of high-k dielectrics based metal-oxide-semiconductor structures