Authors L. Aguilera, X. Aymerich, M. Nafría, M. Porti, R. Rodríguez, and E. Amat Citation Key 211 COinS Data Date Published 2007 Pagination 1618-1621 Journal Microelectronic Engineering Volume 84 (5-8) Year of Publication 2007 ← Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance → Influence of the SiO2 layer thickness on the degradation de HfO2/SiO2 stacks subjected to static and dynamic stress conditions