Authors E. Miranda, X. Aymerich, M. Nafría, R. Rodríguez, and J. Suñé Citation Key 248 COinS Data Date Published 2001 Pagination 1327-1332 Journal Solid State Electronics Volume 45 Year of Publication 2001 ← Imaging breakdown spots in SiO2 films and MOS devices with a Conductive Atomic Force Microscope → Two-step stress methodology for monitoring the gate oxide degradation in MOS devices