Authors Mario Lanza Citation Key 185 COinS Data Date Published 07/2010 University Universitat Autònoma de Barcelona Advisor M. Porti Year of Publication 2010 ← BTI and Dielectric Breakdown in high-k gated NMOS transistors studied using DC and Fast Measurements → Degradació del stack dielèctric de porta SiO2/high-k en dispositius MOS: BTI i portadors calents