Accession Number
WOS:000351751100042
Authors
Q. Wu, E. Simoen, X. Aymerich, M. Nafría, R. Rodríguez, J. Martín-Martínez, A. Bayerl, and M. Porti
Citation Key
402
COinS Data

Date Published
MARCH 2015
DOI
10.1116/1.4913950
ISSN
1071-1023
Keywords
CAFM, channel hot carriers, CHC, defect, defect density, device level, MOSFET SiGe, nanoscale, strained MOSFET, stress
Issue
2
Journal
Journal of Vacuum Science & Technology B
Type of Article
Article
URL
http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=2&SID=T2RNqQwde7r4jL3OUYv&page=1&doc=4
Volume
33
Year of Publication
2015