Accession Number
11697179
Authors
E. Amat, E. Simoen, P. Verheyen, M. Bauer, V. Machkaoutsan, X. Aymerich, M. Nafría, J. Martín-Martínez, M B González, and R. Rodríguez
Citation Key
367
COinS Data

DOI
10.1109/ICSICT.2010.5667396
ISBN Number
978-1-4244-5797-7
Keywords
channel hot carriers, channel hot-carriers degradation, CHC, circuit reliability, degradation, device performance, embedded source-drain, hot carriers, impact ionization, Integrated circuit reliability, MOSFET, MOSFETs, reliability, SiC, SiGe, silicon car
Pagination
1648-1650
Conference Location
Shanghai, China
Conference Name
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
URL
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5667396
Year of Conference
2010