Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers

Authors

J. Martín-Martínez, A Rubio, F. V. Fernández, E. Roca, X. Aymerich, M. Nafría, R. Rodríguez, and J. Díaz

Citation Key

396

COinS Data

Date Published

Oct 2014

DOI

10.1109/VARI.2014.6957088

ISBN Number

14772731

Keywords

amplifiers, characterization, device drain current, Integrated circuit reliability, MOSFET, parameter extraction, pMOS transistors, random noise, random telegraph noise, reliability, SRAM chips, SRAM sense amplifiers, voltage sense amplifiers

Conference Location

Palma de Mallorca

Publisher

IEEE

Conference Name

European Workshop on CMOS Variability (VARI)

URL

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6957088&queryText=nafria&sortType=desc_p_Publication_Year&searchField=Search_All

Year of Publication

2014