Authors M. Porti, B. Garrido, J. Carreras, X. Aymerich, M. Nafría, and M. Avidano Citation Key 228 COinS Data Date Published 2005 Journal Journal of Applied Physics Start Page 056101 Volume 98(5) Year of Publication 2005 ← New insights on the post-BD conduction of MOS devices at the nanoscale → Influence of oxide breakdown position and device aspect ratio on MOSFET’s output characteristics