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- Accession Number
- 16998247
- Authors
- C. Couso, X. Aragones, D. Mateo, E. Barajas, R. Castro-López, E. Roca, F. V. Fernández, M. Nafría, R. Rodríguez, M. Porti, J. Martín-Martínez, and J. Díaz-Fortuny
- Citation Key
- 436
- COinS Data
- Date Published
- July 2017
- DOI
- 10.1109/ULIS.2017.7962608
- ISBN Number
- 2472-9132
- Keywords
- channel dimension, charges, device variability, fitting, Geometry, Mathematical model, MOSFET, MOSFET threshold voltage variability, Pelgrom rule, Pelgrom's law, Semiconductor process modeling, TCAD simulation, Threshold voltage, variability
- Conference Location
- Athens, Greece
- Publisher
- IEEE
- Conference Name
- Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International EUROSOI Workshop and International Conference on
- URL
- http://ieeexplore.ieee.org/document/7962608/
- Year of Publication
- 2017