Authors R. Fernández, X. Aymerich, M. Nafría, and R. Rodríguez Citation Key 209 COinS Data Date Published 2007 Issue 4-5 Pagination 581-584 Journal Microelectronics Reliability Volume 47 Year of Publication 2007 ← MOSFET Output Characteristics After Oxide Breakdown → Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance