Accession Number
10878814
Authors
A. Gasperin, A. Paccagnella, X. Aymerich, M. Nafría, J. Martín-Martínez, M. Porti, and E. Amat
Citation Key
368
COinS Data

Date Published
September 2009
DOI
10.1109/TED.2009.2028404
ISSN
0018-9383
Keywords
2D TCAD simulation, charge trapping, circuit CAD, circuit simulation, extrapolation, FG, flash memories, floating gate, floating-gate flash memory cell, Leakage current, nanocrystal memory cells, nanotechnology, NC, NCMs, nonvolatile memories, phase chang
Issue
10
Pagination
2319-2326
Journal
IEEE Transactions on Device and Materials Reliability
Start Page
2319
URL
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5238630&sortType%3Ddesc_p_Publication_Year%26pageNumber%3D2%26queryText%3DMartin-Martinez
Volume
56
Year of Publication
2009