Authors M. Lanza, B. Hamilton, E. Wittaker, X. Aymerich, M. Nafría, and M. Porti Citation Key 160 COinS Data Date Published 2010 Journal Review of Scientific Instruments Start Page 106110 Volume 81 Year of Publication 2010 ← UHV CAFM characterization of high-k dielectrics: effect of the technique resolution on the pre- and post-breakdown electrical measurements → Recovery of the MOSFET and circuit functionality after the Dielectric Breakdown of Ultra-Thin High-k Gate Stacks.