Authors X. Blasco, X. Aymerich, and M. Nafría Citation Key 223 COinS Data Date Published 2005 Journal Review of Scientific Instruments Start Page 016105 Volume 76 (1) Year of Publication 2005 ← Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by Enhanced-CAFM → A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals