Authors
K. McKenna, G. Bersuker, M. Lanza, M. Nafría, M. Porti, V. Iglesias, and A. Shluger
Citation Key
312
COinS Data

Date Published
JUL-2011
DOI
http://dx.doi.org/10.1016/j.mee.2011.03.024
ISBN Number
790FA
ISSN
0167-9317
Keywords
Atomic force microscopy, DEFECTS, Density functional theory, Grain boundaries, HfO2, Leakage current, MGO, RESISTIVE SWITCHING MEMORIES
Issue
7
Pagination
1272-1275
Journal
Microelectronics Engineering
Start Page
1272
Type of Article
Article; Proceedings Paper
URL
http://www.sciencedirect.com/science/article/pii/S0167931711002838
Volume
88
Year of Publication
2011