Authors E. Amat, J.H. Stathis, X. Aymerich, M. Nafría, and R. Rodríguez Citation Key 212 COinS Data Date Published 2007 Issue 4-5 Pagination 544-547 Journal Microelectronics Reliability Volume 47 Year of Publication 2007 ← Analysis of the degradation of HfO2/SiO2 gate stacks using nanoscale and device level techniques → Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror