Accession Number
WOS:000362308000009
Authors
V. Iglesias, A. Crodes, G. Bersuker, M. Nafría, M. Porti, and Q. Wu
Citation Key
419
COinS Data

Date Published
November 2015
DOI
10.1016/j.mee.2015.04.058
ISSN
0167-9317 / eISSN (1873-5568)
Keywords
ATOMIC-FORCE MICROSCOPY; MOLECULAR-BEAM EPITAXY; CURRENT CONDUCTION; SCHOTTKY CONTACTS; LEAKAGE CURRENT; GAN FILMS; BREAKDOWN; MECHANISMS; TRANSPORT; High mobility substrates; III-V semiconductors; Threading Dislocations; CAFM
Pagination
31-36
Publication Language
English
Publisher
ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Journal
MICROELECTRONIC ENGINEERING
Start Page
31
URL
http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=4&SID=Q13j3klyA7W1Mf8d8CD&page=1&doc=1
Volume
147
Year of Publication
2015