Nanoscale and device level electrical behavior of ALD annealed Hf-based gate stacks grown with different precursors

Authors

A. Bayerl, S. De Gendt, X. Aymerich, M. Nafría, M. Porti, L. Aguilera, and M. Lanza

Citation Key

314

COinS Data

Journal

Microelectronics Engineering

Year of Publication

2011