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- Accession Number
- 12216290
- Authors
- A. Bayerl, G. Benstetter, F. Campabadal, X. Aymerich, M. Nafría, M. Porti, and M. Lanza
- Citation Key
- 315
- COinS Data
- Date Published
- SEP 2011
- DOI
- 10.1109/TDMR.2011.2161087
- ISBN Number
- 819UO
- ISSN
- 1530-4388
- Keywords
- Atomic force microscopy (AFM); high-k crystallization; high-k dielectric; MOS devices; variability
- Issue
- 3
- Pagination
- 495-501
- Journal
- IEEE Transactions on Device and Materials Reliability
- Start Page
- 495
- Type of Article
- Article; Proceedings Paper
- URL
- http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5936690
- Volume
- 11
- Year of Publication
- 2011