Authors M. Porti, B. Garrido, J. Carreras, X. Aymerich, M. Nafría, and M. Avidano Citation Key 224 COinS Data Date Published 2005 Pagination 268-271 Journal Microelectronic Engineering Volume 80 Year of Publication 2005 ← Enhanced electrical performance for conductive atomic force microscopy → Irradiation induced weak spots in SiO2 gate oxides of MOS devices observed with C-AFM