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- Accession Number
- 13399057
- Authors
- M. Lanza, G. Jing, H. Liang, Y. Zhang, Z. Liu, T. Gao, X. Aymerich, A. Bayerl, M. Nafría, M. Porti, H. Duan, and Y. Wang
- Citation Key
- 398
- COinS Data
- Date Published
- Feb 2013
- DOI
- 10.1109/CDE.2013.6481394
- ISBN Number
- 978-1-4673-4667-2
- Keywords
- capacitors, chemical vapor deposition, compressive strain, conductive channel, CVD, flat substrates, graphene layers, graphene-substrate adhesion, metal oxide semiconductor field effect, metallic electrodes, nanoscale morphology, rough substrates, strain-
- Conference Location
- Valladolid
- Publisher
- IEEE
- Conference Name
- Electron Device Spanish Conference (CDE)
- URL
- http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6481394&queryText=nafria&sortType=desc_p_Publication_Year&searchField=Search_All
- Year of Publication
- 2013