Authors Q. Wu, M. Nafría, F. Campabadal, J. Martín-Martínez, M B González, M. Porti, and S. Claramunt Citation Key 451 COinS Data Conference Location China Conference Name China RRAM Intenational Conference Year of Publication 2017 ← Analysis of the Resistive Switchingbehaviour of Ti/GO/Au ReRAM structures → Ni/HfO2/Si Resistive Switching structures: A device level and nanoscale analysis with CAFM