Authors N. Ayala, E. Simoen, X. Ayemrcih, M. Nafria, R. Rodríguez, P. Verheyen, M B González, E. Amat, and J. Martín-Martínez Citation Key 299 COinS Data Pagination 1384-1387 Journal Microelectronic Engineering Volume 88 Year of Publication 2011 ← Injected Charge to Recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric → NBTI related time-dependent variability of mobility and threshold voltage in pMOSFETs and their impact on circuit performance