Accession Number
WOS:000365614500011
Authors
M. Maestro, X. Aymerich, F. Campabadal, M. Nafría, R. Rodríguez, J. Martín-Martínez, M B González, A. Crespo-Yepes, and J. Díaz
Citation Key
417
COinS Data

Date Published
January 2016
DOI
10.1016/j.sse.2015.08.010
ISSN
0038-1101 / eISSN(1879-2405)
Keywords
RRAM DEVICES; HFO2 RRAM; VARIABILITY;Resistive switching; Random Telegraph Noise; Resolution; Time constants; RRAM
Issue
Subdivision B
Pagination
140-145
Journal
SOLID-STATE ELECTRONICS
Start Page
140
Type of Article
Paper
URL
http://apps.webofknowledge.com/full_record.do?product=UA&search_mode=GeneralSearch&qid=5&SID=Y113B7XdUh6zQc9qpgR&page=1&doc=1
Volume
115
Year of Publication
2016