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- Authors
- A. Bayerl, X. Aymerich, M. Nafría, F. Campabadal, M. Porti, and M. Lanza
- Citation Key
- 313
- COinS Data
- Date Published
- JUL 2011
- DOI
- 10.1016/j.mee.2011.03.122
- ISBN Number
- 790FA
- ISSN
- 0167-9317
- Keywords
- MOS devices; Atomic Force Microscopy; Reliability; Variability; High-k dielectric; High-k crystallization
- Issue
- 7
- Pagination
- 1334-1337
- Journal
- Microelectronics Engineering
- Start Page
- 1334
- Type of Article
- Article; Proceedings Paper
- URL
- http://www.sciencedirect.com/science/article/pii/S0167931711003819
- Volume
- 88
- Year of Publication
- 2011