Breu presentació:
Albert Crespo Yepes, born in Barcelona (1982), he received the degree in Telecomunications Engineering in 2008 for UAB (Universitat Autònoma de Barcelona). In 2009 he obtained the master in micro and nano electronics. In 2012 he finalized his Ph. D. studies in Electronic Engineering in the group of Reliability Electron DEvices and Cricuits in the Electronic Department of the Universitat Autònoma de Barcelona (UAB). Currently, he is post-Ph.D. researcher in this group and teaches in this university. His work is focused on electron device characterization and the study of the reliability and aging mechanisms such as Dielectric Breakdown (TDDB), Channel Hot-Carriers (CHC) and Bias Temperature Instability (BTI) for next generation of CMOS devices, and their impact on the perfomance of analog and digital circuits. He has also widely studied the Resistive Switching phenomenon which is taking a lot of attention for applications in the field of non-volatile memories and neuromorphic circuits. Other relevant contributions are focused on the characterization of emerging devices and technologies, such as Ink printed devices or Organic Thin Film Transistors (OTFTs), for new low-cost and low-power applications in IoT, Computing, Sensing or Instrumentation.