Breu presentació:
Marc Porti was born in Granollers (Barcelona), in 1974. He graduated in Physics at the Universitat Autònoma de Barcelona, Spain, in 1997. In 1998 he joined the Department of Electronic Engineering at the Universitat Autònoma de Barcelona where he received the Ph.D in 2003, and currently he is an Associate Professor at the Department of Electronic Engineering. His main research interest is the analysis (mainly at the nanoscale with Scanning Probe Microscopies) of the electrical properties, variability and reliability of advanced MOS structures and emerging devices as those based on Resistive Switching and graphene.