Breu presentació:
Montserrat Nafría received the Ph.D. degree in Physics from the Universitat Autonoma de Barcelona, Spain, in 1993, where she is currently a Full Professor at the Department of Electronic Engineering. Her major research interests include CMOS device and circuit reliability. Currently, she is working on the characterization and modelling of the aging (BTI and channel hot carrier degradations) and variability of advanced MOS devices. This is done from the nanoscale level, by studying the phenomena using Atomic Force Microscope-related techniques, up to circuit level, by developing models for circuit simulators that account for the time-dependent variability of the devices. She is also interested in the characterization and modelling of Resistive-Switching devices and graphene-based structures. She is the author or coauthor of more than 200 research papers in scientific journals and conferences in all these fields.
ORCID: 0000-0002-9549-2890