Breu presentació:
Rosana Rodríguez received the degree in Telecommunication Engineering from the Universitat Politècnica de Catalunya (UPC) in 1995 and the Ph. D. in Electrical Engineering from the Universitat Autònoma de Barcelona (UAB) in 2000. Funded by the Fulbright program, she worked on devices and circuits reliability at the IBM Thomas J. Watson Research Center (USA). Currently, she is associate professor at the Universitat Autònoma de Barcelona. Her main research interests are focused on the effect of CMOS dielectric failure on the performance of single devices and digital and analogical circuits. In particular, she analyses, both experimental and theoretically, different failure mechanisms, such as dielectric degradation and breakdown, NBTI and Channel Hot Carriers on state-of-the-art gate dielectrics under DC and AC conditions.