Publications

El resultat de la recerca duta a terme per REDEC es reflecteix en un ampli nombre de publicacions a congressos i revistes de l’àrea, així com tesis doctorals. Seguidament, es proporciona el llistat complet, classificat per any de publicació. Si es desitja més informació sobre els articles, conferències i tesis, no dubti en posar-se en contacte amb REDEC.

• Articles i Congressos més rellevants
• Tesis

2017

• 2017, S. Claramunt, M. Nafría, F. Campabadal, J. Martín-Martínez, M B González, M. C. Acero, M. Porti, M. Maestro, and Q. Wu. Ni/HfO2/Si Resistive Switching structures: A device level and nanoscale analysis with CAFM. Electron Device Spanish Conference (CDE)
• 2017, Q. Wu, M. Nafría, F. Campabadal, J. Martín-Martínez, M B González, M. Porti, and S. Claramunt. Nanosclae observation of conductive filaments in Ni/HfO2/Si structures. China RRAM Intenational Conference
• 2017, S. Claramunt, X. Aymerich, M. Nafría, M. Porti, A. Ruiz, Q. Wu, and G. Pedreira. Analysis of the Resistive Switchingbehaviour of Ti/GO/Au ReRAM structures. Graphene Conference
• 2017, S. Claramunt, X. Aymerich, M. Nafría, C. Colomines, M. Porti, A. Ruiz, Q. Wu, and B. Sempere. Nanoscale electrical characterization of a varistor-like device fabricated with oxydized CVD graphene. Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International EUROSOI Workshop and International Conference on
• 2017, G. Vescio, X. Aymerich, M. Nafría, A. Cirera, A. Cornet, R. Rodríguez, M. Porti, S. Claramunt, D. Alonso, and A. Crespo-Yepes. Inkjet Printed HfO2-based ReRAMs: first demonstration and performance characterization. IEEE Electron Device Letters 38 457-460
• 2017, J. Martín-Martínez, F. Campabadal, M. Nafría, R. Rodríguez, M B González, M. Pedró, and N. Jiménez. Synaptic Plasticity implemented in TiN/Ti/HfO2/W structures. Memristive System and Devices (MEMRISYS)
• 2017, M. Pedró, X. Aymerich, M. Nafría, F. Campabadal, R. Rodríguez, M B González, and J. Martín-Martínez. Tuning the conductivity of resistive switching devices for electronic synapses. Microelectronics Engineering 178 89-92
• 2017, M. Pedró, X. Aymerich, M. Nafría, F. Campabadal, M B González, and J. Martín-Martínez. Control of the Bipolar Resistive Switching Conductivity for Neuromorphic Computing Applications. Electron Device Spanish Conference (CDE)
• 2017, M. Maestro, A. Rubio, X. Aymerich, M. Nafría, R. Rodríguez, M. Escudero, A. Crespo-Yepes, and J. Martín-Martínez. Transient Analysis of an Experimentally-Verified Memristor-Based IMPLY Gate. Memristive System and Devices (MEMRISYS)
• 2017, M. Maestro, X. Aymerich, M. Nafría, R. Rodríguez, A. Crespo-Yepes, J. Martín-Martínez, and J. Díaz-Fortuny. Enhancement of Resistive Switching Measurement TimeResolution by a Developed Ultrafast System. Electron Device Spanish Conference (CDE)
• 2017, C. Couso, X. Aragones, D. Mateo, E. Barajas, R. Castro-López, E. Roca, F. V. Fernández, M. Nafría, R. Rodríguez, M. Porti, J. Martín-Martínez, and J. Díaz-Fortuny. Dependence of MOSFETs Threshold Voltage Variability on Channel Dimensions. Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International EUROSOI Workshop and International Conference on
• 2017, C. Couso, X. Aymerich, M. Nafría, M. Porti, and J. Martín-Martínez. Efficient methodology to extract interface traps parameters for TCAD simulations. Microelectronics Engineering 178 66-70
• 2017, C. Couso, M. Nafría, N. Seoane, A. J. Garcia-Loureiro, J. Martín-Martínez, and M. Porti. Local Defect Density in Polycrystaline High-k dielectrics: CAFM-Based Evaluation Methodology and Impact on MOSFET Variability. IEEE Electron Device Letters 38 637-640
• 2017, A. Crespo-Yepes, M. Nafría, R. Rodríguez, X. Aragones, D. Mateo, J. Martín-Martínez, and E. Barajas. MOSFET degradation dependence on input signal power in a RF power amplifier. Microelectronics Engineering 178 289-292

2016

• 2016, Q. Wu, X. Aymerich, M. Nafría, M. Porti, and S. Claramunt. Evaluation of ultra-thin structures composed of graphene and high-k dielectrics for Resistive Switching memory Applications. International Journal Nanotechnology 13 634-641
• 2016, A. Varea, A. Cirera, A. Cornet, M. M. Velázquez, J. D. Prades, P. Serra, J. M. Fernández-Pradas, D. López-Díaz, S. Claramunt, O. Monereo, S. Illera, and O. Olmedo. Carbon-based materials Raman structural analysis and implementation on flexible devices by means of Electrospray. Energy Materials Nanotechnology (EMN)
• 2016, J. Martín-Martínez, F. Campabadal, M. Nafría, R. Rodríguez, M B González, M. Pedró, and N. Jiménez. Changing the SET current limit to control the Bipolar Resistive Switching Conductivity. Workshop on Dielectrics in Microelectronics (WoDiM)
• 2016, C. Couso, G. Bersuker, A. Cordes, N. Domingo, M. Nafría, S. Claramunt, M. Porti, and V. Iglesias. Conductance of Threading Dislocations in InGaAs/Si Stacks by Temperature-CAFM Measurements. IEEE Electron Device Letters 37 640-643
• 2016, M. Maestro, X. Aymerich, F. Campabadal, M. Nafría, R. Rodríguez, J. Martín-Martínez, M B González, A. Crespo-Yepes, and J. Díaz. New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM. SOLID-STATE ELECTRONICS 115 140-145
• 2016, A. Crespo-Yepes, F. Campabadal, M B González, X. Aymerich, M. Nafría, R. Rodríguez, M. Maestro, I. Rama, and J. Martín-Martínez. Intra-device statistical parameters in variability-aware modelling of resistive switching devices. EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

2015

• 2015, A. Varea, A. Cirera, A. Cornet, M. M. Velázquez, D. López-Díaz, and S. Claramunt. The importance of the interband of Raman Spectrum of Graphene Oxide. Materials Research Society Meeting (MRS)
• 2015, S. Claramunt, X. Aymerich, M. Nafría, A. Crespo-Yepes, A. Ruiz, M. Porti, and Q. Wu. High-throughput fabrication of graphene based electron devices over amorphous thin oxide layers. Graphin International Workshop
• 2015, Q. Wu, X. Aymerich, M. Nafría, M. Porti, and S. Claramunt. Evaluation of ultra-thin structures composed of graphene and high-k dielectrics for Resistive Switching memory Applications. Trends in Nanotechnology (TNT)
• 2015, V. Iglesias, A. Crodes, G. Bersuker, M. Nafría, M. Porti, and Q. Wu. Monitoring defects in III-V materials: A nanoscale CAFM study. MICROELECTRONIC ENGINEERING 147 31-36
• 2015, S. Claramunt, M. Nafría, F. Campabadal, J. Martín-Martínez, M B González, M. Porti, M. Maestro, and Q. Wu. Non-homogeneous conduction of conductive filaments in Ni/HfO2/Si resistive switching structures observed with CAFM. MICROELECTRONICS ENGINEERING 147 335-338
• 2015, M. Maestro, X. Aymerich, M. Nafría, F. Campabadal, R. Rodríguez, M B González, A. Crespo-Yepes, J. Díaz, and J. Martín-Martínez. Analysis of Set and Reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages. Microelectronics Reliability
• 2015, Q. Wu, E. Simoen, X. Aymerich, M. Nafría, R. Rodríguez, J. Martín-Martínez, A. Bayerl, and M. Porti. Channel-Hot-Carrier degradation of strained MOSFETs: A device level and nanoscale combined approach. Journal of Vacuum Science & Technology B 33
• 2015, A. Pérez-Tomás, Y. Cordier, M. Nafría, M. Porti, S. Chenot, M. Chmielowska, M. Placidi, Y. K. Sharma, C. A. Fisher, M. Thomas, M. R. Jennings, P. M. Gammon, H. Chen, V. Iglesias, A. Fontsere, and G. Catalán. Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor. NANOTECHNOLOGY 26
• 2015, C. Couso, X. Aymerich, M. Nafría, V. Iglesias, J. Martín-Martínez, and M. Porti. Conductive-AFM topography and current maps simulator for the study of polycrystalline high-k dielectrics. Journal of Vacuum Science & Technology B 33
• 2015, T. Berthold, M. Nafría, R. Rodríguez, W. Frammelsberger, and G. Bersuker. Nanoscale characterization of copper oxide films by Kelvin Probe Force Microscopy. THIN SOLID FILMS 584 310-315
• 2015, H. Amrouch, X. Aymerich, M. Nafría, R. Rodríguez, M. Moras, V. M. van Santen, and J. Martín-Martínez. Connecting the physical and application level towards grasping aging effects. International Reliability Physics Symposium (IRPS)
• 2015, M. Maestro, X. Aymerich, M. Nafría, R. Rodríguez, S. Claramunt, J. Martín-Martínez, and A. Crespo-Yepes. Distinguishing conductive filament and non-loaclized gate conduction in resistive switching devices. Electron Device Spanish Conference (CDE)
• 2015, V. Iglesias, A. Cordes, G. Bersuker, N. Domingo, E. Miranda, M. Nafría, S. Claramunt, Q. Wu, C. Couso, and M. Porti. Threading dislocations in III-V semiconductors: Analysis of electrical conduction. International Reliability Physics Symposium (IRPS)
• 2015, Q. Wu, E. Simoen, X. Aymerich, M. Nafría, R. Rodríguez, J. Martín-Martínez, M. Lanza, A. Bayerl, and M. Porti. Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs. Electron Device Spanish Conference (CDE)
• 2015, M. Maestro, X. Aymerich, F. Campabadal, M. Nafría, R. Rodríguez, J. Martín-Martínez, M B González, A. Crespo-Yepes, and J. Díaz. A new high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM. Ultimate Investigation on Silicon joint International EUROSOI (EUROSOI-ULIS)

2014

• 2014, O. Pirrotta, G. Bersuker, M. Nafría, M. Porti, A. Padovani, M. Lanza, and L. Larcher. Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain. JOURNAL OF APPLIED PHYSICS 114
• 2014, J. Martín-Martínez, X. Aymerich, M. Nafría, R. Rodríguez, and M. Moras. RELAB: a tool to include MOSFETs variability, BTI aging and dielectric breakdown in SPICE simulators. ANALOG INTEGRATED CIRCUITS AND SIGNALS PROCESSING 78 65-76
• 2014, K. Zhang, M. Nafría, M. Porti, S. M. Hou, Q. Fu, Z. Y. Shen, and M. Lanza. Analysis of Factors in the Nanoscale Physical and Electrical Characterization on high-k Materials by Conductive Atomic Force Microscope. INTEGRATED FERROELECTRICS 153 1-8
• 2014, J. Martín-Martínez, A Rubio, M. Nafría, R. Rodríguez, A. Crespo-Yepes, and C G Almudéver. A Shapeshifting evolvable hardware mechanism based on reconfigurable memFETs. Microelectronics Reliability 58 1500-1510
• 2014, M. Moras, E. Simoen, X. Aymerich, M. Nafría, R. Rodríguez, and J. Martín-Martínez. Negative Bias Temperature Instabilities induced in device with millisecond anneal for ultra-shallow junctions. SOLID-STATES ELECTRONICS 101 131-136
• 2014, V. Velayudhan, E. Gámiz, C. Medina, X. Aymerich, M. Nafría, M. Porti, R. Rodríguez, and J. Martín-Martínez. TCAD simulation of interface traps related variability in bulk decananometer mosfets. European Workshop on CMOS Variability (VARI)
• 2014, J. Martín-Martínez, A Rubio, F. V. Fernández, E. Roca, X. Aymerich, M. Nafría, R. Rodríguez, and J. Díaz. Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers. European Workshop on CMOS Variability (VARI)
• 2014, J. Martín-Martínez, X. Aymerich, M. Nafría, R. Rodríguez, and J. Díaz. New Weighted Time Lag Method the Analysis of Random Telegraph Signals. IEEE Electron Device Letters 35 479-481
• 2014, Q. Wu, E. Simoen, M B González, X. Aymerich, M. Nafría, V. Velayudhan, R. Rodríguez, M. Lanza, J. Martín-Martínez, M. Porti, and A. Bayerl. A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs. Electron Devices, IEEE Transactions on 61 3118-3124

2013

• 2013, E. Amat, G. Groeseneken, R. Degraeve, X. Aymerich, M. Nafría, R. Rodríguez, and T. Kauerauf. A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics. Microelectronics Reliability 103 144-149
• 2013, M. Lanza, H. L. Duan, Z. F. Liu, Y. F. Zhang, G. Y. Jing, M. Nafría, M. Porti, T. Gao, and A. Bayerl. Graphene-Coated Atomic Force Microscope Tips for Reliable Nanoscale Electrical Characterization. ADVANCED MATERIALS 25 1440-1444
• 2013, M. Lanza, H. Duan, Y. Tong, Y. Zhang, Z. Liu, G. Jing, H. Liang, M. Nafría, M. Porti, T. Gao, A. Bayerl, and Y. Wang. Tuning graphene morphology by substrate towards wrinkle-free devices: Experiment and simulation. JOURNAL OF APPLIED PHYSICS 113
• 2013, A. Bayerl, S. de Gendt, X. Aymerich, M. Nafría, M. Porti, L. Aguilera, and M. Lanza. Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. Microelectronics Reliability 53 867-871
• 2013, M. Lanza, H. L. Duan, D. P. Yu, Z. F. Liu, Y. F. Zhang, G. Y. Jing, Y. B. Zhou, M. Nafría, M. Porti, A. Bauer, T. Gao, and Y. Wang. Electrical and mechanical performance of graphene sheets exposad to oxidative environments. NANO RESEARCH 6 485-495
• 2013, V. Iglesias, G. Bersuker, L. Frey, A. J. Bauer, K. Murakami, M. Rommel, T. Erlbacher, X. Aymerich, M. Nafría, R. Rodríguez, M. Porti, and J. Martín-Martínez. Bimodal CAFM TDDB distributions in polycristalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries. Microelectronics Reliability 109 129-132
• 2013, V. Velayudhan, X. Aymerich, M. Nafría, R. Rodríguez, J. Martín-Martínez, and F. Gámiz. Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs. Microelectronics Reliability 53 1243-1246
• 2013, M. Lanza, G. Jing, H. Liang, Y. Zhang, Z. Liu, T. Gao, X. Aymerich, A. Bayerl, M. Nafría, M. Porti, H. Duan, and Y. Wang. Nanoscale morphology of graphene on different substrates. Electron Device Spanish Conference (CDE)
• 2013, A. Crespo-Yepes, X. Aymerich, M. Nafría, R. Rodríguez, and J. Martín-Martínez. Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications. MICROELECTRONICS RELIABILITY 53 1247-1251
• 2013, A. Bayerl, E. Simoen, M B González, X. Aymerich, M. Nafría, E. Amat, V. Velayudhan, R. Rodríguez, M. Lanza, J Martín-Martínez, and M. Porti. Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale. 2013 IEEE International Reliability Physics Symposium (IRPS) 5D.4.1 – 5D.4.6
• 2013, J. Martín-Martínez, X. Aymerich, M. Nafría, R. Rodríguez, V. Velayudhan, N. Ayala, and M. Moras. Modeling of time-dependence variability caused by Bias Temperature Instability. 2013 Spanish Conference on Electron Devices (CDE) 241-244
• 2013, A. Crespo-Yepes, M. Lanza, X. Aymerich, M. Nafría, M. Porti, R. Rodríguez, V. Iglesias, and J. Martín-Martínez. Nanoscale and device level analysis of the resistive switching phenomenon in ultra-thin high-k gate dielectrics. 2013 Spanish Conference on electron Devices (CDE)
• 2013, J. Martín-Martínez, A Rubio, C G Almudéver, X. Aymerich, M. Nafría, R. Rodríguez, and A. Crespo-Yepes. memFET: From gate Dielectric Breakdown to system reconfigurability. 2013 IEEE Reliability Physics Symposium (IRPS)
• 2013, A. Crespo-Yepes, X. Aymerich, M. Nafría, R. Rodríguez, and J. Martín-Martínez. Temperature dependence of the resistive switching-related currents in ultra-thin high-k based MOSFETs. Journal of Vacuum Science & Technology B 31 022203-022203-5

2012

• 2012, A. Fontsere, M. Nafría, M. Lanza, A. Bayerl, M. Porti, V. Iglesias, J. C. Moreno, Y. Cordier, S. Chenot, N. Baron, J. Llobet, M. Placidi, and A. Perez-Tomas. Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale. Applied Physics Letters 101 093505-093505-4
• 2012, J. Martín-Martínez, G. Groeseneken, B. Dierickx, X. Aymerich, M. Nafría, R. Rodríguez, P. J. Roussel, R. Degraeve, and B. Kaczer. Circuit Design-Oriented stochastic piecewise modeling of the Postbreakdown gate current in MOSFETs: Application to ring oscillators. IEEE Transactions on Device and Materials Reliability 12 78-85
• 2012, J. Martín-Martínez, X. Aymerich, M. Nafría, R. Rodríguez, and N. Ayala. RELAB: A tool to include MOSFETs BTI and variability in SPICE simulators. 2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) 249-252
• 2012, J. Martín-Martínez, X. Aymerich, M. Nafría, R. Rodríguez, and N. Ayala. Bias Temperature Instability: characterization, modeling and circuit aging evaluation. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 1-4
• 2012, N. Ayala, X. Aymerich, M. Nafría, R. Rodríguez, and J. Martín-Martínez. Unified characterization of RTN and BTI for circuit performance and variability simulation. 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) 266-269
• 2012, R. Rodríguez, X. Aymerich, M. Nafría, M. Porti, A. Crespo-Yepes, and J. Martín-Martínez. Dielectric Breakdown in ultra-thin Hf based gate stacks: A resistive Switching Phenomenon. journal of the Electrochemical Society 159 H529-H535
• 2012, G C Almudéver, M. Nafría, R. Rodríguez, A. Crespo-Yepes, J. Martín-Martínez, and A Rubio. Shape-shifting digital hardware concept: Towards a new adaptative computing system. Adaptive Hardware and Systems (AHS), 2012 NASA/ESA Conference on 167-173

2011

• 2011, A. Crespo-Yepes, X. Aymerich, M. Nafría, R. Rodríguez, A. Rothschild, and J. Martín-Martínez. Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs. SOLID-STATE ELECTRONICS 65-66 157-162
• 2011, G. Bersuker, M. Nafría, M. Porti, V. Iglesias, A. Shluger, K. McKenna, L. Larcher, A. Padovani, L. Vandelli, P. Kirsch, D. Veksler, and D. C. Gilmer. Metal oxide resistive memory switching mechanism based on conductive filament properties. Journal of Applied Physics 110 124518 – 124518-12
• 2011, V. Iglesias, G. Bersuker, Z. Y. Shen, G. Benstetter, X. Aymerich, M. Nafría, M. Porti, A. Bayerl, K. Zhang, and M. Lanza. Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress. APPLIED PHYSICS LETTERS 99 239901-239901-1
• 2011, M. Nafría, X. Aymerich, M. Lanza, J. Martín-Martínez, M. Porti, and R. Rodríguez. time-dependent variability of high-k based MOS devices: Nanoscale characterization and inclusion in circuit simulators. 2011 IEEE International Electron Devices Meeting (IEDM) 6.3.1-6.3.4
• 2011, E. Amat, E. Simoen, P. Verheyen, X. Aymerich, M. Nafría, R. Rodríguez, M B González, and J. Martín-Martínez. Processing dependence of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 29 01AB07-01AB07-4
• 2011, J. Martín-Martínez, G. Groeseneken, X. Aymerich, M. Nafría, R. Rodríguez, M. Toledano-Luque, and B. Kaczer. Probabilistic defect occupancy model for NBTI. 2011 IEEE International Reliability Physics Symposium (IRPS) XT.4.1-XT.4.6
• 2011, A. Crespo-Yepes, X. Aymerich, M. Nafría, R. Rodríguez, A. Rothschild, and J. Martín-Martínez. Injected Charge to Recovery as a parameter to characterize the Breakdown Reversibility of ultrathin HfSiON gate dielectric. IEEE Transactions on Device and Materials Reliability 11 126-130
• 2011, J. Martín-Martínez, E. Simoen, X. Aymerich, M. Nafría, R. Rodríguez, P. Verheyen, M B González, N. Ayala, and E. Amat. Aging mechanisms in strained Si/high-k based pMOS transistors. Implications in CMOS circuits. 2011 Spanish Conference on Electron Devices 1-4
• 2011, A. Crespo-Yepes, X. Aymerich, M. Nafría, R. Rodríguez, and J. Martín-Martínez. Dielectric breakdown recovery in ultrathin high-k gate stacks. Impact in MOSFETs and circuit performance. Spanish Conference on Electron Devices (CDE), 2011
• 2011, G. Bersuker, R. Jammy, P. Kirsch, A. Shluger, K. McKenna, M. Nafría, M. Porti, V. Iglesias, and J. Yum. Grain boundaries driven leakage path formation in HfO2 dielectrics. 333 – 336
• 2011, A. Bayerl, G. Benstetter, F. Campabadal, X. Aymerich, M. Nafría, M. Porti, and M. Lanza. Nanoscale and device level gate conduction variability of high-k dielectrics based metal-oxide-semiconductor structures. IEEE Transactions on Device and Materials Reliability 11 495-501
• 2011, A. Bayerl, S. De Gendt, X. Aymerich, M. Nafría, M. Porti, L. Aguilera, and M. Lanza. Nanoscale and device level electrical behavior of ALD annealed Hf-based gate stacks grown with different precursors. Microelectronics Engineering
• 2011, A. Bayerl, X. Aymerich, M. Nafría, F. Campabadal, M. Porti, and M. Lanza. Reliability and Gate Conduction Variability of HfO2-based MOS Devices: a Combined Nanoscale and Devices Level Study. Microelectronics Engineering 88 1334-1337
• 2011, K. McKenna, G. Bersuker, M. Lanza, M. Nafría, M. Porti, V. Iglesias, and A. Shluger. Grian Boundary Mediated Leakage Current in Polycristalline HfO2 films. Microelectronics Engineering 88 1272-1275
• 2011, A. Bayerl, X. Aymerich, M. Nafría, M. Porti, M. Lanza, and V. Iglesias. High-k dielectric polycrystallization effects on the nanoscale electrical properties of MOS structures. Proceedings of the 8th Spanish Conference on Electron DEvices

2010

• 2010, G. Bersuker, R. Jammy, P. Kirsch, A. Shluger, K. McKenna, M. Nafría, M. Porti, V. Iglesias, and J. Yum. Grain boundary-driven leakage path formation in HfO2 dielectrics. 2010 Proceedings of the European Solid-State Device Research Conference (ESSDERC) 333-336
• 2010, E. Amat, E. Simoen, P. Verheyen, M. Bauer, V. Machkaoutsan, X. Aymerich, M. Nafría, J. Martín-Martínez, M B González, and R. Rodríguez. Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source/Drain. 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) 1648-1650
• 2010, A. Crespo-Yepes, A. Rothschild, X. Aymerich, M. Nafría, R. Rodríguez, and J. Martín-Martínez. Resistive switching-like behaviour of the dielectric breakdown in ultra-thin Hf based gate stacks in mosfets. Solid-State Device Research Conference (ESSDERC)
• 2010, R: Jammy, G. Bersuker, P. D. Kirsch, W. Taylor, M. Nafría, M. Porti, V. Iglesias, A. Shluger, K. McKenna, L. Larcher, A. Padovani, L. Vandelli, S. Lian, H. Park, J. Yum, D. Veksler, and D. C. Gilmer. Metal Oxide RRAM Switching Mechanism Based on COnductive Filament Microscopic Properties. IEEE International Electron Devices Meeting (IEDM) 19.6.1 – 19.6.4
• 2010, Mario Lanza. CAFM nanoscale electrical characterization of gate stacks for advance MOS devices.
• 2010, A. Crespo-Yepes, X. Aymerich, M. Nafría, R. Rodríguez, A. Rothschild, and J. Martín-Martínez. Recovery of the MOSFET and circuit functionality after the Dielectric Breakdown of Ultra-Thin High-k Gate Stacks.. IEEE Electron Device Letters 31 543-545
• 2010, M. Lanza, B. Hamilton, E. Wittaker, X. Aymerich, M. Nafría, and M. Porti. Electrical resolution during Conductive AFM measurements under different environmental conditions and contact forces. Review of Scientific Instruments 81
• 2010, M. Lanza, B. Hamilton, E. Whittaker, X. Aymerich, M. Nafría, and M. Porti. UHV CAFM characterization of high-k dielectrics: effect of the technique resolution on the pre- and post-breakdown electrical measurements. Microelectronics Reliability 50 (9-11) 1312-1315
• 2010, J Martín-Martinez, E. Simoen, X. Aymerich, M. Nafría, R. Rodríguez, P. Verheyen, M B González, and E. Amat. SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors. Microelectronics Reliability 50 (9-11) 1263-1266
• 2010, E. Amat, G. Groeseneken, X. Aymerich, M. Nafría, R. Rodríguez, R. Degraeve, and T. Kauerauf. Simulation of the hot-carrier degradation in short channel transitors with high-k dielectric. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 23 (4-5) 315-323
• 2010, E. Amat, G. Groeseneken, X. Aymerich, M. Nafría, R. Rodríguez, R. Degraeve, and T. Kauerauf. Channel Hot-Carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack. Microelectronic Engineering 87(1) 47-50
• 2010, V. Iglesias, G. Bersuker, T. Schroeder, P. Dudek, X. Aymerich, M. Nafría, and M. Porti. Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures. APPLIED PHYSICS LETTERS 97 262906-262906-3

2009

• 2009, B. Kaczer, G. Groeseneken, P. J. Roussel, M. Aoulaiche, E. Simoen, J. Martín-Martínez, and T. Grasser. NBTI from the perspective of defect states with widely distributed time scales. 2009 IEEE International Reliability Physics Symposium 55-60
• 2009, A. Gasperin, A. Paccagnella, X. Aymerich, M. Nafría, J. Martín-Martínez, M. Porti, and E. Amat. Effects of the Localization of the Charge in Nanocrystal Memory Cells. IEEE Transactions on Device and Materials Reliability 56 2319-2326
• 2009, J. Martín-Martínez, G. Groeseneken, B. Dierickx, P. Zuber, X. Aymerich, M. Nafría, R. Rodríguez, N. Ayala, J. Boix, and B. Kaczer. Circuit-design oriented modelling of the recovery BTI component and post-BD gate currents. 2009 Spanish Conference on Electron Devices 156-159
• 2009, M. Lanza, G. Ghidini, A. Sebastiani, x: Aymerich, M. Nafría, and M. Porti. Conductive AFM analysis of the trapping properties of SiO2 tunnel layers for non-volatile memory devices. Proceedings of the Trends in Nanotechnology conference, 2009
• 2009, M. Lanza, X. Aymerich, M. Nafría, M. Porti, and L. Aguilera. Improving the electrical performance of CAFM for gate oxide reliability measurements. PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES 234-237
• 2009, M. Lanza, M. Fasoli, A. Vedda, G. Ghinidi, A. Sebastiani, X. Aymerich, M. Nafría, and M. Porti. Combined Nanoscale and Device-Level degradation analysis of SiO2 layers of MOS Nonvolatile Memory Devices. IEEE Transactions on Device and Materials Reliability 9 529-536
• 2009, M. Lanza, A. Sebastiani, G. Ghidini, X. Aymerich, M. Nafría, and M. Porti. Trapped Charge and Stress Induced Leakage Current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale. Microelectronics Reliability 49 1188-1191
• 2009, M. Lanza, P. Michalowski, L. Wilde, S. Teichert, G. Jaschke, H. Ranzinger, E. Lodermeier, G. Benstetter, X. Aymerich, M. Nafría, and M. Porti. Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices. Microelectronic Engineering 88 1921-1924
• 2009, Albert Crespo-Yepes. Estudi de la reversibilitat de la ruptura dielèctrica en dispositius MOS amb dielèctric high-k ultra prim.
• 2009, Vanessa Iglesias. Observaciones topográficas y eléctricas de dieléctricos high-k basados en HfO2 con C-AFM: análisis del impacto de los parámetros experimentales.
• 2009, Javier Martín-Martínez. Modelado de los efectos de la ruptura dieléctrica, BTI y variabilidad en MOSFETs ultraescalados para la simulación de circuitos.
• 2009, Esteve Amat-Bertran. Degradació del stack dielèctric de porta SiO2/high-k en dispositius MOS: BTI i portadors calents.
• 2009, W. Polspoel, X. Aymerich, M. Nafría, M.Porti, L. Aguilera, and W. Vandervorst. Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors. Journal Vacuum Science and Technology B 27(1) 356-359
• 2009, L. Aguilera, X. Aymerich, M. Nafría, M. Porti, A. Bayerl, and M.Lanza. Development of a Conductive Atomic Force Microscope with a logarithmic current-to-voltage converter for the study of MOS gate dielectrics reliability. Journal Vacuum Science and Technology B 27(1) 360-363
• 2009, A. Gasperin, A. Paccagnella, M.Nafría, M. Porti, J. Martín-Martínez, and E. Amat. Peculiar characteristics of nanocrystal memory cells programming window. Journal Vacuum Science and Technology B 27(1) 512-516

2008

• 2008, Núria Ayala. Ruptura en condiciones de estrés dinámico en transistores MOSFET con dieléctricos high-k.
• 2008, J. Boix, X. Aymerich, M. Nafría, R. Rodríguez, and J. Martín-Martínez. BTI and Dielectric Breakdown in high-k gated NMOS transistors studied using DC and Fast Measurements. Proc. European Solid State Devices and Research Conference
• 2008, J. Martín-Martínez, G. Groeseneken, B. Dierickx, P. Zuber, X. Aymerich, M. Nafría, R. Rodríguez, N. Ayala, and B. Kaczer. Stochastic Piecewise modeling of post-BD gate current oriented to circuit design. Proc. European Solid State Devices and Research Conference
• 2008, J. Martín-Martínez, G. Groeseneken, B. Kaczer, X. Aymerich, M. Nafría, and R.Rodríguez. An equivalent circuit model for the recovery component of BTI. Proc. European Solid State Devices and Research Conference 55-58
• 2008, E. Amat, G. Groeseneken, X. Aymerich, M. Nafría, R. Rodríguez, A. De Keersgieter, R. Degraeve, and T. Kauerauf. Channel Hot-Carrier degradation under static stress in short channel transistors with high-k/metal gate stacks. Proc. 9th International Conference on Ultimate Integration on Silicon (ULIS) 103-106
• 2008, B. Kaczer, G. Groeseneken, B. J. O’Sullivan, R. O’Connor, J Martín-Martinez, P. J. Roussel, and T. Grasser. Ubiquitous relaxation in BTI stressing-New evaluation and insights. Proc. International Reliability Physics Symposium . 20-27
• 2008, L. Aguilera, X. Aymerich, M.Nafría, W. Vandervorst, M. Porti, C. Van Haesendonck, A.Volodin, and W.Polspoel. Nanoscale effects of annealing on the electrical characteristics of Hafnium based devices measured in vacuum environment. Proc. International Reliability Physics Symposium 657-658
• 2008, G. Gielen, M. Nafría, R. Rodríguez, G. Groeseneken, B. Kaczer, J.Martín-Martínez, J.Loeckx, E. Maricau, and P. DeWit. Emerging yield and reliability challenges in nanometer CMOS tecnologies. Proc. Design, Automation and Test in Europe (DATE) 1322-1327
• 2008, W. Polspoel, X. Aymerich, M. Nafría, M. Porti, L. Aguilera, and W. Vandervorst. Nanometer-scale leakage current measurements in high vacuum on de-processed high-k capacitors. Microelectronics Reliability 48 1521-1524
• 2008, E.Miranda, F. Crupi, M.Nafría, and P.Falbo. Electron transport through electrically induced nanoconstrictions in HfSiON stacks. Applied Physics Letters 92
• 2008, L. Aguilera, X.Aymerich, M.Nafría, W. Vandervorst, M.Porti, C.Van Haesendonck, A.Volodin, and W.Polspoel. Influence of Vacuum Environment on Conductive AFM measurements of advanced MOS Gate dielectrics. Journal of Vacuum Science and Technology B 26(4) 1445-1449
• 2008, L. Aguilera, X. Aymerich, M. Nafría, J.Grifoll, M. Porti, and M. Lanza. Improving the electrical performance of Conductive Atomic Force Microscope with a logarithmic current-to-voltage converter. Review of Scientific Instruments 79
• 2008, R. Fernández, X. Aymerich, M. Nafría, R. Rodríguez, and J. Martín-Martínez. Gate oxide wear-out and breakdown effects on the performance of analog and digital circuits. IEEE Transactions on Electron Devices 55 997-1004
• 2008, R. Fernández, X. Aymerich, M. Nafría, and R. Rodríguez. Contributions of the gate current and channel current variation to the post-breakdown MOSFET performance. Microelectronic Engineering 85 259-262

2007

• 2007, F. Crupi, R. Rodríguez, M.Nafría, M. Lanuzza, P. Falbo, and L. Magnelli. Performance and reliability of ultrathin oxide nMOSFETs under variable body bias. Microelectronic Engineering 84(9-10) 1947-1950
• 2007, M. Lanza, G. Jaschke, H. Ranzinger, E. Lodermeier, W. Frammelsberger, G. Benstetter, M. Nafría, and M. Porti. Influence of the manufacturing process on the electrical properties of thin (< 4nm) Hafnium based high-k stacks observed with CAFM. Microelectronics Reliability 47 1424-1428
• 2007, J. Martín-Martínez, G. Ghidini, A. Paccagnella, A. Cester, X. Aymerich, M. Nafría, R. Rodríguez, and S. Gerardin. Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs. Microelectronics Reliability 47 1349-1352
• 2007, J. Martín-Martínez, J.H. Stathis, X. Aymerich, M. Nafría, and R. Rodríguez. Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror. Microelectronics Reliability 47 665-668
• 2007, E. Amat, J.H. Stathis, X. Aymerich, M. Nafría, and R. Rodríguez. Influence of the SiO2 layer thickness on the degradation de HfO2/SiO2 stacks subjected to static and dynamic stress conditions. Microelectronics Reliability 47 544-547
• 2007, L. Aguilera, X. Aymerich, M. Nafría, M. Porti, R. Rodríguez, and E. Amat. Analysis of the degradation of HfO2/SiO2 gate stacks using nanoscale and device level techniques. Microelectronic Engineering 84 (5-8) 1618-1621
• 2007, L. Aguilera, X. Aymerich, M. Nafría, F. Crupi, M. Cambrea, R. Rodríguez, M. Porti, and J. Martín-Martínez. Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance. Microelectronic Engineering 84 2113-2116
• 2007, R. Fernández, X. Aymerich, M. Nafría, and R. Rodríguez. Effect of oxide breakdown on RS latches. Microelectronics Reliability 47 581-584
• 2007, R. Fernández, X. Aymerich, M.Nafría, and R. Rodríguez. MOSFET Output Characteristics After Oxide Breakdown. Microelectronics Engineering 84/1 31-36
• 2007, M. Porti, A. Paccagnella, A. Cester, X. Aymerich, M. Nafría, and S. Gerardin. Using AFM related techniques for the nanoscale electrical characterization of irradiated ultra-thin gate oxides. IEEE Transactions on Nuclear Science 54 1891-1897
• 2007, M. Porti, R. Pierobon, P. Schiavuta, A. Paccagnella, A. Cester, X. Aymerich, M. Nafría, and S. Gerardin. Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution. Microelectronic Engineering 84(9-10) 1956-1959
• 2007, M. Porti, B. Garrido, O. Jambois, J. Carreras, X. Aymerich, M. Nafría, and M. Avidano. Nanoscale electrical characterization of Si-nc based memory MOS devices. Journal of Applied Physics 101
• 2007, M. Porti, X. Aymerich, M. Nafría, X. Blasco, and L. Aguilera. Reliability of SiO2 and high-k gate insulators: a nanoscale study with conductive-AFM. Microelectronic Engineering 84(3) 501- 505
• 2007, Javier Martín-Martínez. Efectes de la degradació de l’òxid de porta en MOSFETs nanomètrics: Modelat SPICE i impacte en circuits.
• 2007, Mario Lanza. Avaluació de les prestacions elèctriques diferents dielèctrics high-k amb CAFM.

2006

• 2006, L. Aguilera, X. Aymerich, M. Nafría, and M. Porti. Charge trapping and degradation of HfO2/SiO2 MOS gate stacks observed with Enhanced CAFM. IEEE Electron Device Letters 27 157-159
• 2006, R. Fernández, G. Groeseneken, M. Nafría, R. Rodríguez, S. Demuynck, A. Nackaerts, and B. Kaczer. AC NBTI studied in the 1 Hz – 2 GHz range on dedicated on-chip CMOS circuits. IEEE Int. Electron Device Meeting (IEDM) Tech. Digest 337-340
• 2006, R. Fernández, G. Groeseneken, B. Kaczer, X. Aymerich, M. Nafría, and R. Rodríguez. FinFET and MOSFET preliminary comparison of gate oxide reliability. Microelectronics Reliability 46 1608-1611
• 2006, Esteve Amat-Bertran. Efecte de la capa interficial de SiO2 en la degradació dielèctrica de stacks de HfO2/SiO2 en dispositius MOS sotmesos a estressos estàtics i dinàmics.

2005

• 2005, R. Fernández, X. Aymerich, M. Nafría, and R. Rodríguez. A new approach to the modelling of oxide breakdown on CMOS circuits. Microelectronics Reliability 44 1519-1522
• 2005, L. Aguilera, X. Aymerich, M. Nafría, and M. Porti. Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale. Microelectronics Reliability 45 1390-1393
• 2005, R. Fernández, X. Aymerich, M. Nafría, and R. Rodríguez. DC BD MOSFET model for circuit reliability simulation. Electronic Letters 41 368-370
• 2005, R. Fernández, X. Aymerich, M. Nafría, and R. Rodríguez. Influence of oxide breakdown position and device aspect ratio on MOSFET’s output characteristics. Microelectronics Reliability 45/5-6 861-864
• 2005, M. Porti, B. Garrido, J. Carreras, X. Aymerich, M. Nafría, and M. Avidano. Conduction mechanisms and charge storage in Si-nanocrystals MOS memory devices studied with Conductive Atomic Force Microscopy. Journal of Applied Physics 98(5)
• 2005, M. Porti, X. Aymerich, M. Nafría, and S. Meli. New insights on the post-BD conduction of MOS devices at the nanoscale. IEEE Electron Device Letters 26 (2) 109-111
• 2005, M. Porti, S. Cimino, A. Paccagnella, A. Cester, X. Aymerich, and M. Nafría. Electrical characterization at a nanometer scale of weak spots in irradiated SiO2 gate oxides. IEEE Transactions on Nuclear Science 52 (5) 1457–1461
• 2005, M. Porti, S. Cimino, A. Paccagnella, A. Cester, X. Aymerich, and M. Nafría. Irradiation induced weak spots in SiO2 gate oxides of MOS devices observed with C-AFM. Electronics letters 41 (2) 101-103
• 2005, M. Porti, B. Garrido, J. Carreras, X. Aymerich, M. Nafría, and M. Avidano. A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals. Microelectronic Engineering 80 268-271
• 2005, X. Blasco, X. Aymerich, and M. Nafría. Enhanced electrical performance for conductive atomic force microscopy. Review of Scientific Instruments 76 (1)
• 2005, X. Blasco, W. Vandervorst, J. Pétry, X. Aymerich, and M. Nafría. Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by Enhanced-CAFM. IEEE Transactions on Electron Devices 52 2817-2819
• 2005, X. Blasco, W. Vandervorst, J. Pétry, X. Aymerich, M. Nafría, and M. Porti. Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope. Nanotechnology 16 1506-1511
• 2005, X. Blasco, W. Vandervorst, X. Aymerich, and M. Nafría. Comparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometer scale with CAFM. Electronic Letters 41 719-721
• 2005, Lidia Aguilera-Martínez. Propietats elèctriques a escala nanomètrica de dispositius MOS amb dielèctrics de porta basats en Hafni.
• 2005, Xavier Blasco-Jiménez. Caracterizació elèctrica de dielèctrics de porta de dispositius MOS amb C-AFM: SiO2 i dielèctrics d’alta permitivitat.

2004

• 2004, M. Porti, X. Aymerich, M. Nafría, and S. Meli. Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses. Microelectronics Reliability 44 1523-28
• 2004, M. Porti, X. Aymerich, and M. Nafría. Impact of conductivity and size of the breakdown spot on the progressive-breakdown of thin SiO2 gate oxides. Microelectronic Engineering 72 (1-4) 29-33
• 2004, M. Porti, X. Aymerich, and M. Nafría. Nanometer-scale analysis of current limited stresses impact on SiO2 gate oxide reliability using C-AFM. IEEE Transactions on Nanotechnology 3(1) 55-60
• 2004, X. Blasco, W. Vandervorst, O. Richard, X. Aymerich, M. Nafría, and J.Pétry. C-AFM Characterization of the Dependence of HfAlOx Electrical Behavior on Post Deposition Annealing Temperature. Microelectronic Engineering 72 (1-4) 191-196
• 2004, Raúl Fernández-García. Ruptura dielèctrica del SiO2 en el nMOSFET: modelat DC i efecte en circuits digitals CMOS.

2003

• 2003, M. Porti, X. Aymerich, and M. Nafría. Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. Microelectronics & Reliability 43/9-11 1501-1505
• 2003, M. Porti, X. Aymerich, M. Nafría, and S. Meli. Pre-Breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM. Microelectronics and Reliability 43/8 1203-1209
• 2003, M. Porti, X. Aymerich, M. Nafría, and X. Blasco. Electrical characterization and fabrication of SiO2 based MOS nanoelectronic devices with atomic force microscopy. Nanotechnology 14 584-587
• 2003, M. Porti, X. Aymerich, and M. Nafría. Current limited stresses of SiO2 gate oxides with Conductive Atomic Force Microscope. EEE Transactions on Electron Devices 50 933-940
• 2003, M. Porti, S. Sadewasser, X. Aymerich, M. C. Blüm, and M. Nafría. Atomic Force Microscope topographical artifacts after the dielectric breakdown of ultrathin SiO2 films. Surface Science 532-535 727-731
• 2003, X. Blasco, X. Aymerich, and M. Nafría. Ultra Thin Films of Atomic Force Microscopy Grown SiO2 as Gate Oxide on MOS Structures: Conduction and Breakdown Behavior. Surface Science 532-535 732-736
• 2003, Marc Porti-Pujal. Caracterizació a escala nanomètrica de la degradació i ruptura dielèctrica del SiO2 en dispositius MOS mitjançant C-AFM.