{"id":178,"date":"2009-05-25T13:20:37","date_gmt":"2009-05-25T11:20:37","guid":{"rendered":"https:\/\/webs.uab.cat\/redec\/research\/"},"modified":"2010-01-21T13:44:24","modified_gmt":"2010-01-21T11:44:24","slug":"research","status":"publish","type":"page","link":"https:\/\/webs.uab.cat\/redec\/en\/research\/","title":{"rendered":"Research"},"content":{"rendered":"<p><strong>&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; &#8212;&nbsp; UNDER CONSTRUCTION&nbsp; &#8212;<\/strong><\/p>\n<p>&nbsp;<\/p>\n<p><strong>1) Objectives:<\/strong><\/p>\n<p><strong>REDEC\u2019s<\/strong> research is focused on the reliability and variability of CMOS nanoelectronic devices, emerging devices and integrated circuits.&nbsp; Electrical characterization and modelling of the device time-dependent variability in these technologies is carried out adopting a multilevel scale, covering from the nanoscale to the device and circuit levels. The aim is the development of physics-based compact models for the reliability circuit simulators required in the Design-for-Reliability context. This approach is extended to other emerging nanoelectronic devices, as Resistive Switching and graphene based devices.<\/p>\n<p>&nbsp;<\/p>\n<p><strong>2) Keywords:<\/strong><\/p>\n<p>CMOs technology, nanoelectronics, reliability, variability, electrical characterization, Atomic Force Microscopy, aging mechanisms, compact modeling, TCAD simulations, Resistive Switching, RRAM, Graphene devices, neuromorphic hardware.<\/p>\n<p>&nbsp;<\/p>\n<p><strong>3) Research lines:<\/strong><\/p>\n<ul>\n<li>Characterization and modeling of the aging mechanisms (RTN, BTI, HCI) in advanced nanoelectronic devices, including process-related variability. Nanoscale (with CAFM) and device level evaluation.<\/li>\n<\/ul>\n<ul>\n<li>Compact modelling of the aging mechanisms, for their inclusion in circuit reliability simulators.<\/li>\n<\/ul>\n<ul>\n<li>Resistive Switching devices. Device characterization and modelling. Computing architectures.<\/li>\n<\/ul>\n<ul>\n<li>Variability sources in graphene-based nanodevices.<\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<p>&nbsp;<a href=\"http:\/\/grupsderecerca.uab.cat\/redec\/en\/content\/impact-failure-mechanism-device-and-circuit-performance\">Impact of failure mechanisms on device and circuit performance<\/a><\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<a href=\"http:\/\/grupsderecerca.uab.cat\/redec\/en\/content\/nanoscale-characterization-electrical-properties-and-reliability-electron-devices\">Nanoscale characterization of the electrical properties and reliability of electron devices<\/a><\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; &#8212;&nbsp; UNDER CONSTRUCTION&nbsp; &#8212; &nbsp; 1) Objectives: REDEC\u2019s research is focused on the reliability and variability of CMOS nanoelectronic devices, emerging devices and integrated circuits.&nbsp; Electrical characterization and modelling of the device time-dependent variability in these technologies is carried out adopting a multilevel scale, covering from the nanoscale to the device and circuit levels. [&hellip;]<\/p>\n","protected":false},"author":20,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-178","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/webs.uab.cat\/redec\/en\/wp-json\/wp\/v2\/pages\/178","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/webs.uab.cat\/redec\/en\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/webs.uab.cat\/redec\/en\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/webs.uab.cat\/redec\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/webs.uab.cat\/redec\/en\/wp-json\/wp\/v2\/comments?post=178"}],"version-history":[{"count":0,"href":"https:\/\/webs.uab.cat\/redec\/en\/wp-json\/wp\/v2\/pages\/178\/revisions"}],"wp:attachment":[{"href":"https:\/\/webs.uab.cat\/redec\/en\/wp-json\/wp\/v2\/media?parent=178"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}