{"id":1072,"date":"2022-10-26T13:09:17","date_gmt":"2022-10-26T11:09:17","guid":{"rendered":"https:\/\/webs.uab.cat\/redec\/publicacions\/"},"modified":"2022-10-26T14:27:54","modified_gmt":"2022-10-26T12:27:54","slug":"publicacions","status":"publish","type":"page","link":"https:\/\/webs.uab.cat\/redec\/es\/publicacions\/","title":{"rendered":"Publicaciones"},"content":{"rendered":"\n<p>El resultat de la recerca duta a terme per <strong>REDEC <\/strong>es reflecteix en un ampli nombre de publicacions a congressos i revistes de l\u2019\u00e0rea, aix\u00ed com tesis doctorals. Seguidament, es proporciona el llistat complet, classificat per any de publicaci\u00f3. Si es desitja m\u00e9s informaci\u00f3 sobre els articles, confer\u00e8ncies i tesis, no dubti en posar-se en contacte amb <strong>REDEC<\/strong>.<\/p>\n\n\n\n<ul class=\"wp-block-list\"><li>Articles i Congressos m\u00e9s rellevants<\/li><li>Tesis<\/li><\/ul>\n\n\n<h2>2017<\/h2><ul class='bibliografia'><li><span class=\"any\">2017<\/span>, S. Claramunt, M. Nafr\u00eda, F. Campabadal, J. Mart\u00edn-Mart\u00ednez, M B Gonz\u00e1lez, M. C. Acero, M. Porti, M. Maestro, y Q. Wu. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/ni-hfo2-si-resistive-switching-structures-a-device-level-and-nanoscale-analysis-with-cafm\/\">Ni\/HfO2\/Si Resistive Switching structures: A device level and nanoscale analysis with CAFM<\/a><\/span>. <span class=\"revista\">Electron Device Spanish Conference (CDE)<\/span>  <\/li><li><span class=\"any\">2017<\/span>, Q. Wu, M. Nafr\u00eda, F. Campabadal, J. Mart\u00edn-Mart\u00ednez, M B Gonz\u00e1lez, M. Porti, y S. Claramunt. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanosclae-observation-of-conductive-filaments-in-ni-hfo2-si-structures\/\">Nanosclae observation of conductive filaments in Ni\/HfO2\/Si structures<\/a><\/span>. <span class=\"revista\">China RRAM Intenational Conference<\/span>  <\/li><li><span class=\"any\">2017<\/span>, S. Claramunt, X. Aymerich, M. Nafr\u00eda, M. Porti, A. Ruiz, Q. Wu, y G. Pedreira. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/analysis-of-the-resistive-switchingbehaviour-of-ti-go-au-reram-structures\/\">Analysis of the Resistive Switchingbehaviour of Ti\/GO\/Au ReRAM structures<\/a><\/span>. <span class=\"revista\">Graphene Conference<\/span>  <\/li><li><span class=\"any\">2017<\/span>, S. Claramunt, X. Aymerich, M. Nafr\u00eda, C. Colomines, M. Porti, A. Ruiz, Q. Wu, y B. Sempere. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanoscale-electrical-characterization-of-a-varistor-like-device-fabricated-with-oxydized-cvd-graphene\/\">Nanoscale electrical characterization of a varistor-like device fabricated with oxydized CVD graphene<\/a><\/span>. <span class=\"revista\">Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International EUROSOI Workshop and International Conference on<\/span>  <\/li><li><span class=\"any\">2017<\/span>, G. Vescio, X. Aymerich, M. Nafr\u00eda, A. Cirera, A. Cornet, R. Rodr\u00edguez, M. Porti, S. Claramunt, D. Alonso, y A. Crespo-Yepes. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/inkjet-printed-hfo2-based-rerams-first-demonstration-and-performance-characterization\/\">Inkjet Printed HfO2-based ReRAMs: first demonstration and performance characterization<\/a><\/span>. <span class=\"revista\">IEEE Electron Device Letters<\/span> 38 457-460<\/li><li><span class=\"any\">2017<\/span>, J. Mart\u00edn-Mart\u00ednez, F. Campabadal, M. Nafr\u00eda, R. Rodr\u00edguez, M B Gonz\u00e1lez, M. Pedr\u00f3, y N. Jim\u00e9nez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/synaptic-plasticity-implemented-in-tin-ti-hfo2-w-structures\/\">Synaptic Plasticity implemented in TiN\/Ti\/HfO2\/W structures<\/a><\/span>. <span class=\"revista\">Memristive System and Devices (MEMRISYS)<\/span>  <\/li><li><span class=\"any\">2017<\/span>, M. Pedr\u00f3, X. Aymerich, M. Nafr\u00eda, F. Campabadal, R. Rodr\u00edguez, M B Gonz\u00e1lez, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/tuning-the-conductivity-of-resistive-switching-devices-for-electronic-synapses\/\">Tuning the conductivity of resistive switching devices for electronic synapses<\/a><\/span>. <span class=\"revista\">Microelectronics Engineering<\/span> 178 89-92<\/li><li><span class=\"any\">2017<\/span>, M. Pedr\u00f3, X. Aymerich, M. Nafr\u00eda, F. Campabadal, M B Gonz\u00e1lez, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/control-of-the-bipolar-resistive-switching-conductivity-for-neuromorphic-computing-applications\/\">Control of the Bipolar Resistive Switching Conductivity for Neuromorphic Computing Applications<\/a><\/span>. <span class=\"revista\">Electron Device Spanish Conference (CDE)<\/span>  <\/li><li><span class=\"any\">2017<\/span>, M. Maestro, A. Rubio, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, M. Escudero, A. Crespo-Yepes, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/transient-analysis-of-an-experimentally-verified-memristor-based-imply-gate\/\">Transient Analysis of an Experimentally-Verified Memristor-Based IMPLY Gate<\/a><\/span>. <span class=\"revista\">Memristive System and Devices (MEMRISYS)<\/span>  <\/li><li><span class=\"any\">2017<\/span>, M. Maestro, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, A. Crespo-Yepes, J. Mart\u00edn-Mart\u00ednez, y J. D\u00edaz-Fortuny. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/enhancement-of-resistive-switching-measurement-timeresolution-by-a-developed-ultrafast-system\/\">Enhancement of Resistive Switching Measurement TimeResolution by a Developed Ultrafast System<\/a><\/span>. <span class=\"revista\">Electron Device Spanish Conference (CDE)<\/span>  <\/li><li><span class=\"any\">2017<\/span>, C. Couso, X. Aragones, D. Mateo, E. Barajas, R. Castro-L\u00f3pez, E. Roca, F. V. Fern\u00e1ndez, M. Nafr\u00eda, R. Rodr\u00edguez, M. Porti, J. Mart\u00edn-Mart\u00ednez, y J. D\u00edaz-Fortuny. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/dependence-of-mosfets-threshold-voltage-variability-on-channel-dimensions\/\">Dependence of MOSFETs Threshold Voltage Variability on Channel Dimensions<\/a><\/span>. <span class=\"revista\">Ultimate Integration on Silicon (EUROSOI-ULIS), 2017 Joint International EUROSOI Workshop and International Conference on<\/span>  <\/li><li><span class=\"any\">2017<\/span>, C. Couso, X. Aymerich, M. Nafr\u00eda, M. Porti, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/efficient-methodology-to-extract-interface-traps-parameters-for-tcad-simulations\/\">Efficient methodology to extract interface traps parameters for TCAD simulations<\/a><\/span>. <span class=\"revista\">Microelectronics Engineering<\/span> 178 66-70<\/li><li><span class=\"any\">2017<\/span>, C. Couso, M. Nafr\u00eda, N. Seoane, A. J. Garcia-Loureiro, J. Mart\u00edn-Mart\u00ednez, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/local-defect-density-in-polycrystaline-high-k-dielectrics-cafm-based-evaluation-methodology-and-impact-on-mosfet-variability\/\">Local Defect Density in Polycrystaline High-k dielectrics: CAFM-Based Evaluation Methodology and Impact on MOSFET Variability<\/a><\/span>. <span class=\"revista\">IEEE Electron Device Letters<\/span> 38 637-640<\/li><li><span class=\"any\">2017<\/span>, A. Crespo-Yepes, M. Nafr\u00eda, R. Rodr\u00edguez, X. Aragones, D. Mateo, J. Mart\u00edn-Mart\u00ednez, y E. Barajas. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/s0167931717302186via%3dihub\/\">MOSFET degradation dependence on input signal power in a RF power amplifier<\/a><\/span>. <span class=\"revista\">Microelectronics Engineering<\/span> 178 289-292<\/li><\/ul><h2>2016<\/h2><ul class='bibliografia'><li><span class=\"any\">2016<\/span>, Q. Wu, X. Aymerich, M. Nafr\u00eda, M. Porti, y S. Claramunt. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/evaluation-of-ultra-thin-structures-composed-of-graphene-and-high-k-dielectrics-for-resistive-switching-memory-applications-2\/\">Evaluation of ultra-thin structures composed of graphene and high-k dielectrics for Resistive Switching memory Applications<\/a><\/span>. <span class=\"revista\">International Journal Nanotechnology<\/span> 13 634-641<\/li><li><span class=\"any\">2016<\/span>, A. Varea, A. Cirera, A. Cornet, M. M. Vel\u00e1zquez, J. D. Prades, P. Serra, J. M. Fern\u00e1ndez-Pradas, D. L\u00f3pez-D\u00edaz, S. Claramunt, O. Monereo, S. Illera, y O. Olmedo. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/carbon-based-materials-raman-structural-analysis-and-implementation-on-flexible-devices-by-means-of-electrospray\/\">Carbon-based materials Raman structural analysis and implementation on flexible devices by means of Electrospray<\/a><\/span>. <span class=\"revista\">Energy Materials Nanotechnology (EMN)<\/span>  <\/li><li><span class=\"any\">2016<\/span>, J. Mart\u00edn-Mart\u00ednez, F. Campabadal, M. Nafr\u00eda, R. Rodr\u00edguez, M B Gonz\u00e1lez, M. Pedr\u00f3, y N. Jim\u00e9nez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/changing-the-set-current-limit-to-control-the-bipolar-resistive-switching-conductivity\/\">Changing the SET current limit to control the Bipolar Resistive Switching Conductivity<\/a><\/span>. <span class=\"revista\">Workshop on Dielectrics in Microelectronics (WoDiM)<\/span>  <\/li><li><span class=\"any\">2016<\/span>, C. Couso, G. Bersuker, A. Cordes, N. Domingo, M. Nafr\u00eda, S. Claramunt, M. Porti, y V. Iglesias. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/conductance-threading-dislocations-ingaassi-stacks-temperature-cafm-measurements\/\">Conductance of Threading Dislocations in InGaAs\/Si Stacks by Temperature-CAFM Measurements<\/a><\/span>. <span class=\"revista\">IEEE Electron Device Letters<\/span> 37 640-643<\/li><li><span class=\"any\">2016<\/span>, M. Maestro, X. Aymerich, F. Campabadal, M. Nafr\u00eda, R. Rodr\u00edguez, J. Mart\u00edn-Mart\u00ednez, M B Gonz\u00e1lez, A. Crespo-Yepes, y J. D\u00edaz. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/new-high-resolution-random-telegraph-noise-rtn-characterization-method-resistive-ram-0\/\">New high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM<\/a><\/span>. <span class=\"revista\">SOLID-STATE ELECTRONICS<\/span> 115 140-145<\/li><li><span class=\"any\">2016<\/span>, A. Crespo-Yepes, F. Campabadal, M B Gonz\u00e1lez, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, M. Maestro, I. Rama, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/intra-device-statistical-parameters-variability-aware-modelling-resistive-switching-devices\/\">Intra-device statistical parameters in variability-aware modelling of resistive switching devices<\/a><\/span>. <span class=\"revista\">EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)<\/span>  <\/li><\/ul><h2>2015<\/h2><ul class='bibliografia'><li><span class=\"any\">2015<\/span>, A. Varea, A. Cirera, A. Cornet, M. M. Vel\u00e1zquez, D. L\u00f3pez-D\u00edaz, y S. Claramunt. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/the-importance-of-the-interband-of-raman-spectrum-of-graphene-oxide\/\">The importance of the interband of Raman Spectrum of Graphene Oxide<\/a><\/span>. <span class=\"revista\">Materials Research Society Meeting (MRS)<\/span>  <\/li><li><span class=\"any\">2015<\/span>, S. Claramunt, X. Aymerich, M. Nafr\u00eda, A. Crespo-Yepes, A. Ruiz, M. Porti, y Q. Wu. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/high-throughput-fabrication-of-graphene-based-electron-devices-over-amorphous-thin-oxide-layers\/\">High-throughput fabrication of graphene based electron devices over amorphous thin oxide layers<\/a><\/span>. <span class=\"revista\">Graphin International Workshop<\/span>  <\/li><li><span class=\"any\">2015<\/span>, Q. Wu, X. Aymerich, M. Nafr\u00eda, M. Porti, y S. Claramunt. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/evaluation-of-ultra-thin-structures-composed-of-graphene-and-high-k-dielectrics-for-resistive-switching-memory-applications\/\">Evaluation of ultra-thin structures composed of graphene and high-k dielectrics for Resistive Switching memory Applications<\/a><\/span>. <span class=\"revista\">Trends in Nanotechnology (TNT)<\/span>  <\/li><li><span class=\"any\">2015<\/span>, V. Iglesias, A. Crodes, G. Bersuker, M. Nafr\u00eda, M. Porti, y Q. Wu. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/monitoring-defects-iii-v-materials-nanoscale-cafm-study\/\">Monitoring defects in III-V materials: A nanoscale CAFM study<\/a><\/span>. <span class=\"revista\">MICROELECTRONIC ENGINEERING<\/span> 147 31-36<\/li><li><span class=\"any\">2015<\/span>, S. Claramunt, M. Nafr\u00eda, F. Campabadal, J. Mart\u00edn-Mart\u00ednez, M B Gonz\u00e1lez, M. Porti, M. Maestro, y Q. Wu. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/non-homogeneous-conduction-conductive-filaments-nihfo2si-resistive-switching-structures\/\">Non-homogeneous conduction of conductive filaments in Ni\/HfO2\/Si resistive switching structures observed with CAFM<\/a><\/span>. <span class=\"revista\">MICROELECTRONICS ENGINEERING<\/span> 147 335-338<\/li><li><span class=\"any\">2015<\/span>, M. Maestro, X. Aymerich, M. Nafr\u00eda, F. Campabadal, R. Rodr\u00edguez, M B Gonz\u00e1lez, A. Crespo-Yepes, J. D\u00edaz, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/analysis-set-and-reset-mechanisms-nihfo2-based-rram-fast-ramped-voltages\/\">Analysis of Set and Reset mechanisms in Ni\/HfO2-based RRAM with fast ramped voltages<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span>  <\/li><li><span class=\"any\">2015<\/span>, Q. Wu, E. Simoen, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, J. Mart\u00edn-Mart\u00ednez, A. Bayerl, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/channel-hot-carrier-degradation-strained-mosfets-device-level-and-nanoscale-combined\/\">Channel-Hot-Carrier degradation of strained MOSFETs: A device level and nanoscale combined approach<\/a><\/span>. <span class=\"revista\">Journal of Vacuum Science &#038; Technology B<\/span> 33 <\/li><li><span class=\"any\">2015<\/span>, A. P\u00e9rez-Tom\u00e1s, Y. Cordier, M. Nafr\u00eda, M. Porti, S. Chenot, M. Chmielowska, M. Placidi, Y. K. Sharma, C. A. Fisher, M. Thomas, M. R. Jennings, P. M. Gammon, H. Chen, V. Iglesias, A. Fontsere, y G. Catal\u00e1n. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanoscale-conductive-pattern-homoepitaxial-algangan-transistor\/\">Nanoscale conductive pattern of the homoepitaxial AlGaN\/GaN transistor<\/a><\/span>. <span class=\"revista\">NANOTECHNOLOGY<\/span> 26 <\/li><li><span class=\"any\">2015<\/span>, C. Couso, X. Aymerich, M. Nafr\u00eda, V. Iglesias, J. Mart\u00edn-Mart\u00ednez, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/conductive-afm-topography-and-current-maps-simulator-study-polycrystalline-high-k\/\">Conductive-AFM topography and current maps simulator for the study of polycrystalline high-k dielectrics<\/a><\/span>. <span class=\"revista\">Journal of Vacuum Science &#038; Technology B<\/span> 33 <\/li><li><span class=\"any\">2015<\/span>, T. Berthold, M. Nafr\u00eda, R. Rodr\u00edguez, W. Frammelsberger, y G. Bersuker. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanoscale-characterization-copper-oxide-films-kelvin-probe-force-microscopy\/\">Nanoscale characterization of copper oxide films by Kelvin Probe Force Microscopy<\/a><\/span>. <span class=\"revista\">THIN SOLID FILMS<\/span> 584 310-315<\/li><li><span class=\"any\">2015<\/span>, H. Amrouch, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, M. Moras, V. M. van Santen, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/connecting-physical-and-application-level-towards-grasping-aging-effects\/\">Connecting the physical and application level towards grasping aging effects<\/a><\/span>. <span class=\"revista\">International Reliability Physics Symposium (IRPS)<\/span>  <\/li><li><span class=\"any\">2015<\/span>, M. Maestro, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, S. Claramunt, J. Mart\u00edn-Mart\u00ednez, y A. Crespo-Yepes. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/distinguishing-conductive-filament-and-non-loaclized-gate-conduction-resistive-switching\/\">Distinguishing conductive filament and non-loaclized gate conduction in resistive switching devices<\/a><\/span>. <span class=\"revista\">Electron Device Spanish Conference (CDE)<\/span>  <\/li><li><span class=\"any\">2015<\/span>, V. Iglesias, A. Cordes, G. Bersuker, N. Domingo, E. Miranda, M. Nafr\u00eda, S. Claramunt, Q. Wu, C. Couso, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/threading-dislocations-iii-v-semiconductors-analysis-electrical-conduction\/\">Threading dislocations in III-V semiconductors: Analysis of electrical conduction<\/a><\/span>. <span class=\"revista\">International Reliability Physics Symposium (IRPS)<\/span>  <\/li><li><span class=\"any\">2015<\/span>, Q. Wu, E. Simoen, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, J. Mart\u00edn-Mart\u00ednez, M. Lanza, A. Bayerl, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/impact-nbti-and-chc-stress-nanoscale-electrical-properties-strained-and-non-strained-mosfets\/\">Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs<\/a><\/span>. <span class=\"revista\">Electron Device Spanish Conference (CDE)<\/span>  <\/li><li><span class=\"any\">2015<\/span>, M. Maestro, X. Aymerich, F. Campabadal, M. Nafr\u00eda, R. Rodr\u00edguez, J. Mart\u00edn-Mart\u00ednez, M B Gonz\u00e1lez, A. Crespo-Yepes, y J. D\u00edaz. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/new-high-resolution-random-telegraph-noise-rtn-characterization-method-resistive-ram\/\">A new high resolution Random Telegraph Noise (RTN) characterization method for resistive RAM<\/a><\/span>. <span class=\"revista\">Ultimate Investigation on Silicon joint International EUROSOI (EUROSOI-ULIS)<\/span>  <\/li><\/ul><h2>2014<\/h2><ul class='bibliografia'><li><span class=\"any\">2014<\/span>, O. Pirrotta, G. Bersuker, M. Nafr\u00eda, M. Porti, A. Padovani, M. Lanza, y L. Larcher. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/leakage-current-through-poly-crystalline-hfo2-trap-densities-grains-and-grain\/\">Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain<\/a><\/span>. <span class=\"revista\">JOURNAL OF APPLIED PHYSICS<\/span> 114 <\/li><li><span class=\"any\">2014<\/span>, J. Mart\u00edn-Mart\u00ednez, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y M. Moras. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/relab-tool-include-mosfets-variability-bti-aging-and-dielectric-breakdown-spice-simulators\/\">RELAB: a tool to include MOSFETs variability, BTI aging and dielectric breakdown in SPICE simulators<\/a><\/span>. <span class=\"revista\">ANALOG INTEGRATED CIRCUITS AND SIGNALS PROCESSING<\/span> 78 65-76<\/li><li><span class=\"any\">2014<\/span>, K. Zhang, M. Nafr\u00eda, M. Porti, S. M. Hou, Q. Fu, Z. Y. Shen, y M. Lanza. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/analysis-factors-nanoscale-physical-and-electrical-characterization-high-k-materials\/\">Analysis of Factors in the Nanoscale Physical and Electrical Characterization on high-k Materials by Conductive Atomic Force Microscope<\/a><\/span>. <span class=\"revista\">INTEGRATED FERROELECTRICS<\/span> 153 1-8<\/li><li><span class=\"any\">2014<\/span>, J. Mart\u00edn-Mart\u00ednez, A Rubio, M. Nafr\u00eda, R. Rodr\u00edguez, A. Crespo-Yepes, y C G Almud\u00e9ver. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/shapeshifting-evolvable-hardware-mechanism-based-reconfigurable-memfets\/\">A Shapeshifting evolvable hardware mechanism based on reconfigurable memFETs<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 58 1500-1510<\/li><li><span class=\"any\">2014<\/span>, M. Moras, E. Simoen, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/negative-bias-temperature-instabilities-induced-device-millisecond-anneal-ultra-shallow\/\">Negative Bias Temperature Instabilities induced in device with millisecond anneal for ultra-shallow junctions<\/a><\/span>. <span class=\"revista\">SOLID-STATES ELECTRONICS<\/span> 101 131-136<\/li><li><span class=\"any\">2014<\/span>, V. Velayudhan, E. G\u00e1miz, C. Medina, X. Aymerich, M. Nafr\u00eda, M. Porti, R. Rodr\u00edguez, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/tcad-simulation-interface-traps-related-variability-bulk-decananometer-mosfets\/\">TCAD simulation of interface traps related variability in bulk decananometer mosfets<\/a><\/span>. <span class=\"revista\">European Workshop on CMOS Variability (VARI)<\/span>  <\/li><li><span class=\"any\">2014<\/span>, J. Mart\u00edn-Mart\u00ednez, A Rubio, F. V. Fern\u00e1ndez, E. Roca, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y J. D\u00edaz. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/characterization-random-telegraph-noise-and-its-impact-reliability-sram-sense-amplifiers\/\">Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers<\/a><\/span>. <span class=\"revista\">European Workshop on CMOS Variability (VARI)<\/span>  <\/li><li><span class=\"any\">2014<\/span>, J. Mart\u00edn-Mart\u00ednez, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y J. D\u00edaz. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/new-weighted-time-lag-method-analysis-random-telegraph-signals-0\/\">New Weighted Time Lag Method the Analysis of Random Telegraph Signals<\/a><\/span>. <span class=\"revista\">IEEE Electron Device Letters<\/span> 35 479-481<\/li><li><span class=\"any\">2014<\/span>, Q. Wu, E. Simoen, M B Gonz\u00e1lez, X. Aymerich, M. Nafr\u00eda, V. Velayudhan, R. Rodr\u00edguez, M. Lanza, J. Mart\u00edn-Mart\u00ednez, M. Porti, y A. Bayerl. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/conductive-afm-nanoscale-analysis-nbti-and-channel-hot-carrier-degradation-mosfets\/\">A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs<\/a><\/span>. <span class=\"revista\">Electron Devices, IEEE Transactions on<\/span> 61 3118-3124<\/li><\/ul><h2>2013<\/h2><ul class='bibliografia'><li><span class=\"any\">2013<\/span>, E. Amat, G. Groeseneken, R. Degraeve, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y T. Kauerauf. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/comprehensive-study-channel-hot-carrier-degradation-short-channel-mosfets-high-k-dielectrics\/\">A comprehensive study of channel hot-carrier degradation in short channel MOSFETs with high-k dielectrics<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 103 144-149<\/li><li><span class=\"any\">2013<\/span>, M. Lanza, H. L. Duan, Z. F. Liu, Y. F. Zhang, G. Y. Jing, M. Nafr\u00eda, M. Porti, T. Gao, y A. Bayerl. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/graphene-coated-atomic-force-microscope-tips-reliable-nanoscale-electrical-characterization\/\">Graphene-Coated Atomic Force Microscope Tips for Reliable Nanoscale Electrical Characterization<\/a><\/span>. <span class=\"revista\">ADVANCED MATERIALS<\/span> 25 1440-1444<\/li><li><span class=\"any\">2013<\/span>, M. Lanza, H. Duan, Y. Tong, Y. Zhang, Z. Liu, G. Jing, H. Liang, M. Nafr\u00eda, M. Porti, T. Gao, A. Bayerl, y Y. Wang. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/tuning-graphene-morphology-substrate-towards-wrinkle-free-devices-experiment-and-simulation\/\">Tuning graphene morphology by substrate towards wrinkle-free devices: Experiment and simulation<\/a><\/span>. <span class=\"revista\">JOURNAL OF APPLIED PHYSICS<\/span> 113 <\/li><li><span class=\"any\">2013<\/span>, A. Bayerl, S. de Gendt, X. Aymerich, M. Nafr\u00eda, M. Porti, L. Aguilera, y M. Lanza. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanoscale-and-device-level-electrical-behavior-annealed-ald-hf-based-gate-oxide-stacks-grown\/\">Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 53 867-871<\/li><li><span class=\"any\">2013<\/span>, M. Lanza, H. L. Duan, D. P. Yu, Z. F. Liu, Y. F. Zhang, G. Y. Jing, Y. B. Zhou, M. Nafr\u00eda, M. Porti, A. Bauer, T. Gao, y Y. Wang. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/electrical-and-mechanical-performance-graphene-sheets-exposad-oxidative-environments\/\">Electrical and mechanical performance of graphene sheets exposad to oxidative environments<\/a><\/span>. <span class=\"revista\">NANO RESEARCH<\/span> 6 485-495<\/li><li><span class=\"any\">2013<\/span>, V. Iglesias, G. Bersuker, L. Frey, A. J. Bauer, K. Murakami, M. Rommel, T. Erlbacher, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, M. Porti, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/bimodal-cafm-tddb-distributions-polycristalline-hfo2-gate-stacks-role-interfacial-layer-and\/\">Bimodal CAFM TDDB distributions in polycristalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 109 129-132<\/li><li><span class=\"any\">2013<\/span>, V. Velayudhan, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, J. Mart\u00edn-Mart\u00ednez, y F. G\u00e1miz. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/influence-interface-trap-location-performance-and-variability-ultra-scaled-mosfets\/\">Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 53 1243-1246<\/li><li><span class=\"any\">2013<\/span>, M. Lanza, G. Jing, H. Liang, Y. Zhang, Z. Liu, T. Gao, X. Aymerich, A. Bayerl, M. Nafr\u00eda, M. Porti, H. Duan, y Y. Wang. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanoscale-morphology-graphene-different-substrates\/\">Nanoscale morphology of graphene on different substrates<\/a><\/span>. <span class=\"revista\">Electron Device Spanish Conference (CDE)<\/span>  <\/li><li><span class=\"any\">2013<\/span>, A. Crespo-Yepes, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/resistive-switching-behavior-mosfets-ultra-thin-hfsion-dielectric-gate-stack-pmos-and-nmos\/\">Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications<\/a><\/span>. <span class=\"revista\">MICROELECTRONICS RELIABILITY<\/span> 53 1247-1251<\/li><li><span class=\"any\">2013<\/span>, A. Bayerl, E. Simoen, M B Gonz\u00e1lez, X. Aymerich, M. Nafr\u00eda, E. Amat, V. Velayudhan, R. Rodr\u00edguez, M. Lanza, J Mart\u00edn-Mart\u00ednez, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/channel-hot-carriers-degradation-mosfets-conductive-afm-study-nanoscale\/\">Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale<\/a><\/span>. <span class=\"revista\">2013 IEEE International Reliability Physics Symposium (IRPS)<\/span>  5D.4.1 &#8211; 5D.4.6<\/li><li><span class=\"any\">2013<\/span>, J. Mart\u00edn-Mart\u00ednez, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, V. Velayudhan, N. Ayala, y M. Moras. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/modeling-time-dependence-variability-caused-bias-temperature-instability\/\">Modeling of time-dependence variability caused by Bias Temperature Instability<\/a><\/span>. <span class=\"revista\">2013 Spanish Conference on Electron Devices (CDE)<\/span>  241-244<\/li><li><span class=\"any\">2013<\/span>, A. Crespo-Yepes, M. Lanza, X. Aymerich, M. Nafr\u00eda, M. Porti, R. Rodr\u00edguez, V. Iglesias, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanoscale-and-device-level-analysis-resistive-switching-phenomenon-ultra-thin-high-k-gate\/\">Nanoscale and device level analysis of the resistive switching phenomenon in ultra-thin high-k gate dielectrics<\/a><\/span>. <span class=\"revista\">2013 Spanish Conference on electron Devices (CDE)<\/span>  <\/li><li><span class=\"any\">2013<\/span>, J. Mart\u00edn-Mart\u00ednez, A Rubio, C G Almud\u00e9ver, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y A. Crespo-Yepes. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/memfet-gate-dielectric-breakdown-system-reconfigurability\/\">memFET: From gate Dielectric Breakdown to system reconfigurability<\/a><\/span>. <span class=\"revista\">2013 IEEE Reliability Physics Symposium (IRPS)<\/span>  <\/li><li><span class=\"any\">2013<\/span>, A. Crespo-Yepes, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/temperature-dependence-resistive-switching-related-currents-ultra-thin-high-k-based-mosfets\/\">Temperature dependence of the resistive switching-related currents in ultra-thin high-k based MOSFETs<\/a><\/span>. <span class=\"revista\">Journal of Vacuum Science &#038; Technology B<\/span> 31 022203-022203-5<\/li><\/ul><h2>2012<\/h2><ul class='bibliografia'><li><span class=\"any\">2012<\/span>, A. Fontsere, M. Nafr\u00eda, M. Lanza, A. Bayerl, M. Porti, V. Iglesias, J. C. Moreno, Y. Cordier, S. Chenot, N. Baron, J. Llobet, M. Placidi, y A. Perez-Tomas. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/gate-current-analysis-algangan-silicon-heterojunction-transistors-nanoscale\/\">Gate current analysis of AlGaN\/GaN on silicon heterojunction transistors at the nanoscale<\/a><\/span>. <span class=\"revista\">Applied Physics Letters<\/span> 101 093505-093505-4<\/li><li><span class=\"any\">2012<\/span>, J. Mart\u00edn-Mart\u00ednez, G. Groeseneken, B. Dierickx, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, P. J. Roussel, R. Degraeve, y B. Kaczer. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/circuit-design-oriented-stochastic-piecewise-modeling-postbreakdown-gate-current-mosfets\/\">Circuit Design-Oriented stochastic piecewise modeling of the Postbreakdown gate current in MOSFETs: Application to ring oscillators<\/a><\/span>. <span class=\"revista\">IEEE Transactions on Device and Materials Reliability<\/span> 12 78-85<\/li><li><span class=\"any\">2012<\/span>, J. Mart\u00edn-Mart\u00ednez, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y N. Ayala. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/relab-tool-include-mosfets-bti-and-variability-spice-simulators\/\">RELAB: A tool to include MOSFETs BTI and variability in SPICE simulators<\/a><\/span>. <span class=\"revista\">2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)<\/span>  249-252<\/li><li><span class=\"any\">2012<\/span>, J. Mart\u00edn-Mart\u00ednez, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y N. Ayala. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/bias-temperature-instability-characterization-modeling-and-circuit-aging-evaluation\/\">Bias Temperature Instability: characterization, modeling and circuit aging evaluation<\/a><\/span>. <span class=\"revista\">2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT)<\/span>  1-4<\/li><li><span class=\"any\">2012<\/span>, N. Ayala, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/unified-characterization-rtn-and-bti-circuit-performance-and-variability-simulation\/\">Unified characterization of RTN and BTI for circuit performance and variability simulation<\/a><\/span>. <span class=\"revista\">2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC)<\/span>  266-269<\/li><li><span class=\"any\">2012<\/span>, R. Rodr\u00edguez, X. Aymerich, M. Nafr\u00eda, M. Porti, A. Crespo-Yepes, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/dielectric-breakdown-ultra-thin-hf-based-gate-stacks-resistive-switching-phenomenon\/\">Dielectric Breakdown in ultra-thin Hf based gate stacks: A resistive Switching Phenomenon<\/a><\/span>. <span class=\"revista\">journal of the Electrochemical Society<\/span> 159 H529-H535<\/li><li><span class=\"any\">2012<\/span>, G C Almud\u00e9ver, M. Nafr\u00eda, R. Rodr\u00edguez, A. Crespo-Yepes, J. Mart\u00edn-Mart\u00ednez, y A Rubio. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/shape-shifting-digital-hardware-concept-towards-new-adaptative-computing-system\/\">Shape-shifting digital hardware concept: Towards a new adaptative computing system<\/a><\/span>. <span class=\"revista\">Adaptive Hardware and Systems (AHS), 2012 NASA\/ESA Conference on<\/span>  167-173<\/li><\/ul><h2>2011<\/h2><ul class='bibliografia'><li><span class=\"any\">2011<\/span>, A. Crespo-Yepes, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, A. Rothschild, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/resistive-switching-behavior-dielectric-breakdown-ultra-thin-hf-based-gate-stacks-mosfets\/\">Resistive switching-like behavior of the dielectric breakdown in ultra-thin Hf based gate stacks in MOSFETs<\/a><\/span>. <span class=\"revista\">SOLID-STATE ELECTRONICS<\/span> 65-66 157-162<\/li><li><span class=\"any\">2011<\/span>, G. Bersuker, M. Nafr\u00eda, M. Porti, V. Iglesias, A. Shluger, K. McKenna, L. Larcher, A. Padovani, L. Vandelli, P. Kirsch, D. Veksler, y D. C. Gilmer. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/metal-oxide-resistive-memory-switching-mechanism-based-conductive-filament-properties\/\">Metal oxide resistive memory switching mechanism based on conductive filament properties<\/a><\/span>. <span class=\"revista\">Journal of Applied Physics<\/span> 110 124518 &#8211; 124518-12<\/li><li><span class=\"any\">2011<\/span>, V. Iglesias, G. Bersuker, Z. Y. Shen, G. Benstetter, X. Aymerich, M. Nafr\u00eda, M. Porti, A. Bayerl, K. Zhang, y M. Lanza. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/degradation-polycrystalline-hfo2-based-gate-dielectrics-under-nanoscale-electrical-stress\/\">Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress<\/a><\/span>. <span class=\"revista\">APPLIED PHYSICS LETTERS<\/span> 99 239901-239901-1<\/li><li><span class=\"any\">2011<\/span>, M. Nafr\u00eda, X. Aymerich, M. Lanza, J. Mart\u00edn-Mart\u00ednez, M. Porti, y R. Rodr\u00edguez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/time-dependent-variability-high-k-based-mos-devices-nanoscale-characterization-and-inclusion\/\">time-dependent variability of high-k based MOS devices: Nanoscale characterization and inclusion in circuit simulators<\/a><\/span>. <span class=\"revista\">2011 IEEE International Electron Devices Meeting (IEDM)<\/span>  6.3.1-6.3.4<\/li><li><span class=\"any\">2011<\/span>, E. Amat, E. Simoen, P. Verheyen, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, M B Gonz\u00e1lez, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/processing-dependence-channel-hot-carrier-degradation-strained-si-p-channel-metal-oxide\/\">Processing dependence of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors<\/a><\/span>. <span class=\"revista\">Journal of Vacuum Science &#038; Technology B: Microelectronics and Nanometer Structures<\/span> 29 01AB07-01AB07-4<\/li><li><span class=\"any\">2011<\/span>, J. Mart\u00edn-Mart\u00ednez, G. Groeseneken, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, M. Toledano-Luque, y B. Kaczer. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/probabilistic-defect-occupancy-model-nbti\/\">Probabilistic defect occupancy model for NBTI<\/a><\/span>. <span class=\"revista\">2011 IEEE International Reliability Physics Symposium (IRPS)<\/span>  XT.4.1-XT.4.6<\/li><li><span class=\"any\">2011<\/span>, A. Crespo-Yepes, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, A. Rothschild, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/injected-charge-recovery-parameter-characterize-breakdown-reversibility-ultrathin-hfsion\/\">Injected Charge to Recovery as a parameter to characterize the Breakdown Reversibility of ultrathin HfSiON gate dielectric<\/a><\/span>. <span class=\"revista\">IEEE Transactions on Device and Materials Reliability<\/span> 11 126-130<\/li><li><span class=\"any\">2011<\/span>, J. Mart\u00edn-Mart\u00ednez, E. Simoen, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, P. Verheyen, M B Gonz\u00e1lez, N. Ayala, y E. Amat. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/aging-mechanisms-strained-sihigh-k-based-pmos-transistors-implications-cmos-circuits\/\">Aging mechanisms in strained Si\/high-k based pMOS transistors. Implications in CMOS circuits<\/a><\/span>. <span class=\"revista\">2011 Spanish Conference on Electron Devices<\/span>  1-4<\/li><li><span class=\"any\">2011<\/span>, A. Crespo-Yepes, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/dielectric-breakdown-recovery-ultrathin-high-k-gate-stacks-impact-mosfets-and-circuit-perfor\/\">Dielectric breakdown recovery in ultrathin high-k gate stacks. Impact in MOSFETs and circuit performance<\/a><\/span>. <span class=\"revista\">Spanish Conference on Electron Devices (CDE), 2011<\/span>  <\/li><li><span class=\"any\">2011<\/span>, G. Bersuker, R. Jammy, P. Kirsch, A. Shluger, K. McKenna, M. Nafr\u00eda, M. Porti, V. Iglesias, y J. Yum. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/grain-boundaries-driven-leakage-path-formation-hfo2-dielectrics\/\">Grain boundaries driven leakage path formation in HfO2 dielectrics<\/a><\/span>. <span class=\"revista\"><\/span>  333 &#8211; 336<\/li><li><span class=\"any\">2011<\/span>, A. Bayerl, G. Benstetter, F. Campabadal, X. Aymerich, M. Nafr\u00eda, M. Porti, y M. Lanza. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanoscale-and-device-level-gate-conduction-variability-high-k-dielectrics-based-metal-oxide\/\">Nanoscale and device level gate conduction variability of high-k dielectrics based metal-oxide-semiconductor structures<\/a><\/span>. <span class=\"revista\">IEEE Transactions on Device and Materials Reliability<\/span> 11 495-501<\/li><li><span class=\"any\">2011<\/span>, A. Bayerl, S. De Gendt, X. Aymerich, M. Nafr\u00eda, M. Porti, L. Aguilera, y M. Lanza. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanoscale-and-device-level-electrical-behavior-ald-annealed-hf-based-gate-stacks-grown-diffe\/\">Nanoscale and device level electrical behavior of ALD annealed Hf-based gate stacks grown with different precursors<\/a><\/span>. <span class=\"revista\">Microelectronics Engineering<\/span>  <\/li><li><span class=\"any\">2011<\/span>, A. Bayerl, X. Aymerich, M. Nafr\u00eda, F. Campabadal, M. Porti, y M. Lanza. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/reliability-and-gate-conduction-variability-hfo2-based-mos-devices-combined-nanoscale-and-de\/\">Reliability and Gate Conduction Variability of HfO2-based MOS Devices: a Combined Nanoscale and Devices Level Study<\/a><\/span>. <span class=\"revista\">Microelectronics Engineering<\/span> 88 1334-1337<\/li><li><span class=\"any\">2011<\/span>, K. McKenna, G. Bersuker, M. Lanza, M. Nafr\u00eda, M. Porti, V. Iglesias, y A. Shluger. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/grian-boundary-mediated-leakage-current-polycristalline-hfo2-films\/\">Grian Boundary Mediated Leakage Current in Polycristalline HfO2 films<\/a><\/span>. <span class=\"revista\">Microelectronics Engineering<\/span> 88 1272-1275<\/li><li><span class=\"any\">2011<\/span>, A. Bayerl, X. Aymerich, M. Nafr\u00eda, M. Porti, M. Lanza, y V. Iglesias. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/high-k-dielectric-polycrystallization-effects-nanoscale-electrical-properties-mos-structures\/\">High-k dielectric polycrystallization effects on the nanoscale electrical properties of MOS structures<\/a><\/span>. <span class=\"revista\">Proceedings of the 8th Spanish Conference on Electron DEvices<\/span>  <\/li><\/ul><h2>2010<\/h2><ul class='bibliografia'><li><span class=\"any\">2010<\/span>, G. Bersuker, R. Jammy, P. Kirsch, A. Shluger, K. McKenna, M. Nafr\u00eda, M. Porti, V. Iglesias, y J. Yum. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/grain-boundary-driven-leakage-path-formation-hfo2-dielectrics\/\">Grain boundary-driven leakage path formation in HfO2 dielectrics<\/a><\/span>. <span class=\"revista\">2010 Proceedings of the European Solid-State Device Research Conference (ESSDERC)<\/span>  333-336<\/li><li><span class=\"any\">2010<\/span>, E. Amat, E. Simoen, P. Verheyen, M. Bauer, V. Machkaoutsan, X. Aymerich, M. Nafr\u00eda, J. Mart\u00edn-Mart\u00ednez, M B Gonz\u00e1lez, y R. Rodr\u00edguez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/channel-hot-carrier-degradation-strained-mosfets-embedded-sige-or-sic-sourcedrain\/\">Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC Source\/Drain<\/a><\/span>. <span class=\"revista\">2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)<\/span>  1648-1650<\/li><li><span class=\"any\">2010<\/span>, A. Crespo-Yepes, A. Rothschild, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/resistive-switching-behaviour-dielectric-breakdown-ultra-thin-hf-based-gate-stacks-mosfets\/\">Resistive switching-like behaviour of the dielectric breakdown in ultra-thin Hf based gate stacks in mosfets<\/a><\/span>. <span class=\"revista\">Solid-State Device Research Conference (ESSDERC)<\/span>  <\/li><li><span class=\"any\">2010<\/span>, R: Jammy, G. Bersuker, P. D. Kirsch, W. Taylor, M. Nafr\u00eda, M. Porti, V. Iglesias, A. Shluger, K. McKenna, L. Larcher, A. Padovani, L. Vandelli, S. Lian, H. Park, J. Yum, D. Veksler, y D. C. Gilmer. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/metal-oxide-rram-switching-mechanism-based-conductive-filament-microscopic-properties\/\">Metal Oxide RRAM Switching Mechanism Based on COnductive Filament Microscopic Properties<\/a><\/span>. <span class=\"revista\">IEEE International Electron Devices Meeting (IEDM)<\/span>  19.6.1 &#8211; 19.6.4<\/li><li><span class=\"any\">2010<\/span>, Mario Lanza. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/cafm-nanoscale-electrical-characterization-gate-stacks-advance-mos-devices\/\">CAFM nanoscale electrical characterization of gate stacks for advance MOS devices<\/a><\/span>. <span class=\"revista\"><\/span>  <\/li><li><span class=\"any\">2010<\/span>, A. Crespo-Yepes, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, A. Rothschild, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/recovery-mosfet-and-circuit-functionality-after-dielectric-breakdown-ultra-thin-high-k-gate\/\">Recovery of the MOSFET and circuit functionality after the Dielectric Breakdown of Ultra-Thin High-k Gate Stacks.<\/a><\/span>. <span class=\"revista\">IEEE Electron Device Letters<\/span> 31 543-545<\/li><li><span class=\"any\">2010<\/span>, M. Lanza, B. Hamilton, E. Wittaker, X. Aymerich, M. Nafr\u00eda, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/electrical-resolution-during-conductive-afm-measurements-under-different-environmental-condi\/\">Electrical resolution during Conductive AFM measurements under different environmental conditions and contact forces<\/a><\/span>. <span class=\"revista\">Review of Scientific Instruments<\/span> 81 <\/li><li><span class=\"any\">2010<\/span>, M. Lanza, B. Hamilton, E. Whittaker, X. Aymerich, M. Nafr\u00eda, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/uhv-cafm-characterization-high-k-dielectrics-effect-technique-resolution-pre-and-post-breakd\/\">UHV CAFM characterization of high-k dielectrics: effect of the technique resolution on the pre- and post-breakdown electrical measurements<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 50 (9-11) 1312-1315<\/li><li><span class=\"any\">2010<\/span>, J Mart\u00edn-Martinez, E. Simoen, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, P. Verheyen, M B Gonz\u00e1lez, y E. Amat. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/spice-modelling-hot-carrier-degradation-si1-xgex-sd-and-hfsion-based-pmos-transistors\/\">SPICE modelling of hot-carrier degradation in Si1-xGex S\/D and HfSiON based pMOS transistors<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 50 (9-11) 1263-1266<\/li><li><span class=\"any\">2010<\/span>, E. Amat, G. Groeseneken, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, R. Degraeve, y T. Kauerauf. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/simulation-hot-carrier-degradation-short-channel-transitors-high-k-dielectric\/\">Simulation of the hot-carrier degradation in short channel transitors with high-k dielectric<\/a><\/span>. <span class=\"revista\">International Journal of Numerical Modelling: Electronic Networks, Devices and Fields<\/span> 23 (4-5) 315-323<\/li><li><span class=\"any\">2010<\/span>, E. Amat, G. Groeseneken, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, R. Degraeve, y T. Kauerauf. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/channel-hot-carrier-degradation-pmos-and-nmos-short-channel-transistors-high-k-dielectric-st\/\">Channel Hot-Carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack<\/a><\/span>. <span class=\"revista\">Microelectronic Engineering<\/span> 87(1) 47-50<\/li><li><span class=\"any\">2010<\/span>, V. Iglesias, G. Bersuker, T. Schroeder, P. Dudek, X. Aymerich, M. Nafr\u00eda, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/correlation-between-nanoscale-electrical-and-morphological-properties-crystallized-hafnium-o\/\">Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures<\/a><\/span>. <span class=\"revista\">APPLIED PHYSICS LETTERS<\/span> 97 262906-262906-3<\/li><\/ul><h2>2009<\/h2><ul class='bibliografia'><li><span class=\"any\">2009<\/span>, B. Kaczer, G. Groeseneken, P. J. Roussel, M. Aoulaiche, E. Simoen, J. Mart\u00edn-Mart\u00ednez, y T. Grasser. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nbti-perspective-defect-states-widely-distributed-time-scales\/\">NBTI from the perspective of defect states with widely distributed time scales<\/a><\/span>. <span class=\"revista\">2009 IEEE International Reliability Physics Symposium<\/span>  55-60<\/li><li><span class=\"any\">2009<\/span>, A. Gasperin, A. Paccagnella, X. Aymerich, M. Nafr\u00eda, J. Mart\u00edn-Mart\u00ednez, M. Porti, y E. Amat. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/effects-localization-charge-nanocrystal-memory-cells\/\">Effects of the Localization of the Charge in Nanocrystal Memory Cells<\/a><\/span>. <span class=\"revista\">IEEE Transactions on Device and Materials Reliability<\/span> 56 2319-2326<\/li><li><span class=\"any\">2009<\/span>, J. Mart\u00edn-Mart\u00ednez, G. Groeseneken, B. Dierickx, P. Zuber, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, N. Ayala, J. Boix, y B. Kaczer. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/circuit-design-oriented-modelling-recovery-bti-component-and-post-bd-gate-currents\/\">Circuit-design oriented modelling of the recovery BTI component and post-BD gate currents<\/a><\/span>. <span class=\"revista\">2009 Spanish Conference on Electron Devices<\/span>  156-159<\/li><li><span class=\"any\">2009<\/span>, M. Lanza, G. Ghidini, A. Sebastiani, x: Aymerich, M. Nafr\u00eda, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/conductive-afm-analysis-trapping-properties-sio2-tunnel-layers-non-volatile-memory-devices\/\">Conductive AFM analysis of the trapping properties of SiO2 tunnel layers for non-volatile memory devices<\/a><\/span>. <span class=\"revista\">Proceedings of the Trends in Nanotechnology conference, 2009<\/span>  <\/li><li><span class=\"any\">2009<\/span>, M. Lanza, X. Aymerich, M. Nafr\u00eda, M. Porti, y L. Aguilera. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/improving-electrical-performance-cafm-gate-oxide-reliability-measurements\/\">Improving the electrical performance of CAFM for gate oxide reliability measurements<\/a><\/span>. <span class=\"revista\">PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES<\/span>  234-237<\/li><li><span class=\"any\">2009<\/span>, M. Lanza, M. Fasoli, A. Vedda, G. Ghinidi, A. Sebastiani, X. Aymerich, M. Nafr\u00eda, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/combined-nanoscale-and-device-level-degradation-analysis-sio2-layers-mos-nonvolatile-memory\/\">Combined Nanoscale and Device-Level degradation analysis of SiO2 layers of MOS Nonvolatile Memory Devices<\/a><\/span>. <span class=\"revista\">IEEE Transactions on Device and Materials Reliability<\/span> 9 529-536<\/li><li><span class=\"any\">2009<\/span>, M. Lanza, A. Sebastiani, G. Ghidini, X. Aymerich, M. Nafr\u00eda, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/trapped-charge-and-stress-induced-leakage-current-silc-tunnel-sio2-layers-de-processed-mos-n\/\">Trapped Charge and Stress Induced Leakage Current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 49 1188-1191<\/li><li><span class=\"any\">2009<\/span>, M. Lanza, P. Michalowski, L. Wilde, S. Teichert, G. Jaschke, H. Ranzinger, E. Lodermeier, G. Benstetter, X. Aymerich, M. Nafr\u00eda, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/crystallization-and-silicon-diffusion-nanoscale-effects-electrical-properties-al2o3-based-de\/\">Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices<\/a><\/span>. <span class=\"revista\">Microelectronic Engineering<\/span> 88 1921-1924<\/li><li><span class=\"any\">2009<\/span>, Albert Crespo-Yepes. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/estudi-de-la-reversibilitat-de-la-ruptura-dielectrica-en-dispositius-mos-amb-dielectric-high\/\">Estudi de la reversibilitat de la ruptura diel\u00e8ctrica en dispositius MOS amb diel\u00e8ctric high-k ultra prim<\/a><\/span>. <span class=\"revista\"><\/span>  <\/li><li><span class=\"any\">2009<\/span>, Vanessa Iglesias. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/observaciones-topograficas-y-electricas-de-dielectricos-high-k-basados-en-hfo2-con-c-afm-ana\/\">Observaciones topogr\u00e1ficas y el\u00e9ctricas de diel\u00e9ctricos high-k basados en HfO2 con C-AFM: an\u00e1lisis del impacto de los par\u00e1metros experimentales<\/a><\/span>. <span class=\"revista\"><\/span>  <\/li><li><span class=\"any\">2009<\/span>, Javier Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/modelado-de-los-efectos-de-la-ruptura-dielectrica-bti-y-variabilidad-en-mosfets-ultraescalad\/\">Modelado de los efectos de la ruptura diel\u00e9ctrica, BTI y  variabilidad en MOSFETs ultraescalados para la simulaci\u00f3n de circuitos<\/a><\/span>. <span class=\"revista\"><\/span>  <\/li><li><span class=\"any\">2009<\/span>, Esteve Amat-Bertran. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/degradacio-del-stack-dielectric-de-porta-sio2high-k-en-dispositius-mos-bti-i-portadors-calen\/\">Degradaci\u00f3 del stack diel\u00e8ctric de porta SiO2\/high-k en dispositius MOS: BTI i portadors calents<\/a><\/span>. <span class=\"revista\"><\/span>  <\/li><li><span class=\"any\">2009<\/span>, W. Polspoel, X. Aymerich, M. Nafr\u00eda, M.Porti, L. Aguilera, y W. Vandervorst. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/comparison-standard-macroscopic-and-conductive-atomic-force-microscopy-leakage-measurements\/\">Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors<\/a><\/span>. <span class=\"revista\">Journal Vacuum Science and Technology B<\/span> 27(1) 356-359<\/li><li><span class=\"any\">2009<\/span>, L. Aguilera, X. Aymerich, M. Nafr\u00eda, M. Porti, A. Bayerl, y M.Lanza. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/development-conductive-atomic-force-microscope-logarithmic-current-voltage-converter-study-m\/\">Development of a Conductive Atomic Force Microscope with a logarithmic current-to-voltage converter for the study of MOS gate dielectrics reliability<\/a><\/span>. <span class=\"revista\">Journal Vacuum Science and Technology B<\/span> 27(1) 360-363<\/li><li><span class=\"any\">2009<\/span>, A. Gasperin, A. Paccagnella, M.Nafr\u00eda, M. Porti, J. Mart\u00edn-Mart\u00ednez, y E. Amat. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/peculiar-characteristics-nanocrystal-memory-cells-programming-window\/\">Peculiar characteristics of nanocrystal memory cells programming window<\/a><\/span>. <span class=\"revista\">Journal Vacuum Science and Technology B<\/span> 27(1) 512-516<\/li><\/ul><h2>2008<\/h2><ul class='bibliografia'><li><span class=\"any\">2008<\/span>, N\u00faria Ayala. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/ruptura-en-condiciones-de-estres-dinamico-en-transistores-mosfet-con-dielectricos-high-k\/\">Ruptura en condiciones de estr\u00e9s din\u00e1mico en transistores MOSFET con diel\u00e9ctricos high-k<\/a><\/span>. <span class=\"revista\"><\/span>  <\/li><li><span class=\"any\">2008<\/span>, J. Boix, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/bti-and-dielectric-breakdown-high-k-gated-nmos-transistors-studied-using-dc-and-fast-measure\/\">BTI and Dielectric Breakdown in high-k gated NMOS transistors studied using DC and Fast Measurements<\/a><\/span>. <span class=\"revista\">Proc. European Solid State Devices and Research Conference<\/span>  <\/li><li><span class=\"any\">2008<\/span>, J. Mart\u00edn-Mart\u00ednez, G. Groeseneken, B. Dierickx, P. Zuber, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, N. Ayala, y B. Kaczer. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/stochastic-piecewise-modeling-post-bd-gate-current-oriented-circuit-design\/\">Stochastic Piecewise modeling of post-BD gate current oriented to circuit design<\/a><\/span>. <span class=\"revista\">Proc. European Solid State Devices and Research Conference<\/span>  <\/li><li><span class=\"any\">2008<\/span>, J. Mart\u00edn-Mart\u00ednez, G. Groeseneken, B. Kaczer, X. Aymerich, M. Nafr\u00eda, y R.Rodr\u00edguez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/equivalent-circuit-model-recovery-component-bti\/\">An equivalent circuit model for the recovery component of BTI<\/a><\/span>. <span class=\"revista\">Proc. European Solid State Devices and Research Conference<\/span>  55-58<\/li><li><span class=\"any\">2008<\/span>, E. Amat, G. Groeseneken, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, A. De Keersgieter, R. Degraeve, y T. Kauerauf. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/channel-hot-carrier-degradation-under-static-stress-short-channel-transistors-high-kmetal-ga\/\">Channel Hot-Carrier degradation under static stress in short channel transistors with high-k\/metal gate stacks<\/a><\/span>. <span class=\"revista\">Proc. 9th International Conference on Ultimate Integration on Silicon (ULIS)<\/span>  103-106<\/li><li><span class=\"any\">2008<\/span>, B. Kaczer, G. Groeseneken, B. J. O&#8217;Sullivan, R. O&#8217;Connor, J Mart\u00edn-Martinez, P. J. Roussel, y T. Grasser. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/ubiquitous-relaxation-bti-stressing-new-evaluation-and-insights\/\">Ubiquitous relaxation in BTI stressing-New evaluation and insights<\/a><\/span>. <span class=\"revista\">Proc. International Reliability Physics Symposium  .<\/span>  20-27<\/li><li><span class=\"any\">2008<\/span>, L. Aguilera, X. Aymerich, M.Nafr\u00eda, W. Vandervorst, M. Porti, C. Van Haesendonck, A.Volodin, y W.Polspoel. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanoscale-effects-annealing-electrical-characteristics-hafnium-based-devices-measured-vacuum\/\">Nanoscale effects of annealing on the electrical characteristics of Hafnium based devices measured in vacuum environment<\/a><\/span>. <span class=\"revista\">Proc. International Reliability Physics Symposium<\/span>  657-658<\/li><li><span class=\"any\">2008<\/span>, G. Gielen, M. Nafr\u00eda, R. Rodr\u00edguez, G. Groeseneken, B. Kaczer, J.Mart\u00edn-Mart\u00ednez, J.Loeckx, E. Maricau, y P. DeWit. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/emerging-yield-and-reliability-challenges-nanometer-cmos-tecnologies\/\">Emerging yield and reliability challenges in nanometer CMOS tecnologies<\/a><\/span>. <span class=\"revista\">Proc. Design, Automation and Test in Europe (DATE)<\/span>  1322-1327<\/li><li><span class=\"any\">2008<\/span>, W. Polspoel, X. Aymerich, M. Nafr\u00eda, M. Porti, L. Aguilera, y W. Vandervorst. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanometer-scale-leakage-current-measurements-high-vacuum-de-processed-high-k-capacitors\/\">Nanometer-scale leakage current measurements in high vacuum on de-processed high-k capacitors<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 48 1521-1524<\/li><li><span class=\"any\">2008<\/span>, E.Miranda, F. Crupi, M.Nafr\u00eda, y P.Falbo. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/electron-transport-through-electrically-induced-nanoconstrictions-hfsion-stacks\/\">Electron transport through electrically induced nanoconstrictions in HfSiON stacks<\/a><\/span>. <span class=\"revista\">Applied Physics Letters<\/span> 92 <\/li><li><span class=\"any\">2008<\/span>, L. Aguilera, X.Aymerich, M.Nafr\u00eda, W. Vandervorst, M.Porti, C.Van Haesendonck, A.Volodin, y W.Polspoel. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/influence-vacuum-environment-conductive-afm-measurements-advanced-mos-gate-dielectrics\/\">Influence of Vacuum Environment on Conductive AFM measurements of advanced MOS Gate dielectrics<\/a><\/span>. <span class=\"revista\">Journal of Vacuum Science and Technology B<\/span> 26(4) 1445-1449<\/li><li><span class=\"any\">2008<\/span>, L. Aguilera, X. Aymerich, M. Nafr\u00eda, J.Grifoll, M. Porti, y M. Lanza. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/improving-electrical-performance-conductive-atomic-force-microscope-logarithmic-current-volt\/\">Improving the electrical performance of Conductive Atomic Force Microscope with a logarithmic current-to-voltage converter<\/a><\/span>. <span class=\"revista\">Review of Scientific Instruments<\/span> 79 <\/li><li><span class=\"any\">2008<\/span>, R. Fern\u00e1ndez, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/gate-oxide-wear-out-and-breakdown-effects-performance-analog-and-digital-circuits\/\">Gate oxide wear-out and breakdown effects on the performance of analog and digital circuits<\/a><\/span>. <span class=\"revista\">IEEE Transactions on Electron Devices<\/span> 55 997-1004<\/li><li><span class=\"any\">2008<\/span>, R. Fern\u00e1ndez, X. Aymerich, M. Nafr\u00eda, y R. Rodr\u00edguez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/contributions-gate-current-and-channel-current-variation-post-breakdown-mosfet-performance\/\">Contributions of the gate current and channel current variation to the post-breakdown MOSFET performance<\/a><\/span>. <span class=\"revista\">Microelectronic Engineering<\/span> 85 259-262<\/li><\/ul><h2>2007<\/h2><ul class='bibliografia'><li><span class=\"any\">2007<\/span>, F. Crupi, R. Rodr\u00edguez, M.Nafr\u00eda, M. Lanuzza, P. Falbo, y L. Magnelli. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/performance-and-reliability-ultrathin-oxide-nmosfets-under-variable-body-bias\/\">Performance and reliability of ultrathin oxide nMOSFETs under variable body bias<\/a><\/span>. <span class=\"revista\">Microelectronic Engineering<\/span> 84(9-10) 1947-1950<\/li><li><span class=\"any\">2007<\/span>, M. Lanza, G. Jaschke, H. Ranzinger, E. Lodermeier, W. Frammelsberger, G. Benstetter, M. Nafr\u00eda, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/influence-manufacturing-process-electrical-properties-thin-4nm-hafnium-based-high-k-stacks-o\/\">Influence of the manufacturing process on the electrical properties of thin (< 4nm) Hafnium based high-k stacks observed with CAFM<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 47 1424-1428<\/li><li><span class=\"any\">2007<\/span>, J. Mart\u00edn-Mart\u00ednez, G. Ghidini, A. Paccagnella, A. Cester, X. Aymerich, M. Nafr\u00eda, R. Rodr\u00edguez, y S. Gerardin. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/lifetime-estimation-analog-circuits-electrical-characteristics-stressed-mosfets\/\">Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 47 1349-1352<\/li><li><span class=\"any\">2007<\/span>, J. Mart\u00edn-Mart\u00ednez, J.H. Stathis, X. Aymerich, M. Nafr\u00eda, y R. Rodr\u00edguez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/worn-out-oxide-mosfet-characteristics-role-gate-current-and-device-parameters-current-mirror\/\">Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 47 665-668<\/li><li><span class=\"any\">2007<\/span>, E. Amat, J.H. Stathis, X. Aymerich, M. Nafr\u00eda, y R. Rodr\u00edguez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/influence-sio2-layer-thickness-degradation-de-hfo2sio2-stacks-subjected-static-and-dynamic-s\/\">Influence of the SiO2 layer thickness on the degradation de HfO2\/SiO2 stacks subjected to static and dynamic stress conditions<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 47 544-547<\/li><li><span class=\"any\">2007<\/span>, L. Aguilera, X. Aymerich, M. Nafr\u00eda, M. Porti, R. Rodr\u00edguez, y E. Amat. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/analysis-degradation-hfo2sio2-gate-stacks-using-nanoscale-and-device-level-techniques\/\">Analysis of the degradation of HfO2\/SiO2 gate stacks using nanoscale and device level techniques<\/a><\/span>. <span class=\"revista\">Microelectronic Engineering<\/span> 84 (5-8) 1618-1621<\/li><li><span class=\"any\">2007<\/span>, L. Aguilera, X. Aymerich, M. Nafr\u00eda, F. Crupi, M. Cambrea, R. Rodr\u00edguez, M. Porti, y J. Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/comparison-stressed-poly-si-and-tin-gated-hf-based-nmosfets-characteristics-modeling-and-the\/\">Comparison of stressed Poly-Si and TiN gated Hf-based NMOSFETs characteristics, modeling and their impact on circuits performance<\/a><\/span>. <span class=\"revista\">Microelectronic Engineering<\/span> 84 2113-2116<\/li><li><span class=\"any\">2007<\/span>, R. Fern\u00e1ndez, X. Aymerich, M. Nafr\u00eda, y R. Rodr\u00edguez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/effect-oxide-breakdown-rs-latches\/\">Effect of oxide breakdown on RS latches<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 47 581-584<\/li><li><span class=\"any\">2007<\/span>, R. Fern\u00e1ndez, X. Aymerich, M.Nafr\u00eda, y R. Rodr\u00edguez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/mosfet-output-characteristics-after-oxide-breakdown\/\">MOSFET Output Characteristics After Oxide Breakdown<\/a><\/span>. <span class=\"revista\">Microelectronics Engineering<\/span> 84\/1 31-36<\/li><li><span class=\"any\">2007<\/span>, M. Porti, A. Paccagnella, A. Cester, X. Aymerich, M. Nafr\u00eda, y S. Gerardin. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/using-afm-related-techniques-nanoscale-electrical-characterization-irradiated-ultra-thin-gat\/\">Using AFM related techniques for the nanoscale electrical characterization of irradiated ultra-thin gate oxides<\/a><\/span>. <span class=\"revista\">IEEE Transactions on Nuclear Science<\/span> 54 1891-1897<\/li><li><span class=\"any\">2007<\/span>, M. Porti, R. Pierobon, P. Schiavuta, A. Paccagnella, A. Cester, X. Aymerich, M. Nafr\u00eda, y S. Gerardin. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/systematic-characterization-soft-and-hard-breakdown-spots-using-techniques-nanometer-resolut\/\">Systematic characterization of soft- and hard-breakdown spots using techniques with nanometer resolution<\/a><\/span>. <span class=\"revista\">Microelectronic Engineering<\/span> 84(9-10) 1956-1959<\/li><li><span class=\"any\">2007<\/span>, M. Porti, B. Garrido, O. Jambois, J. Carreras, X. Aymerich, M. Nafr\u00eda, y M. Avidano. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanoscale-electrical-characterization-si-nc-based-memory-mos-devices\/\">Nanoscale electrical characterization of Si-nc based memory MOS devices<\/a><\/span>. <span class=\"revista\">Journal of Applied Physics<\/span> 101 <\/li><li><span class=\"any\">2007<\/span>, M. Porti, X. Aymerich, M. Nafr\u00eda, X. Blasco, y L. Aguilera. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/reliability-sio2-and-high-k-gate-insulators-nanoscale-study-conductive-afm\/\">Reliability of SiO2 and high-k gate insulators: a nanoscale study with conductive-AFM<\/a><\/span>. <span class=\"revista\">Microelectronic Engineering<\/span> 84(3) 501- 505<\/li><li><span class=\"any\">2007<\/span>, Javier Mart\u00edn-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/efectes-de-la-degradacio-de-loxid-de-porta-en-mosfets-nanometrics-modelat-spice-i-impacte-en\/\">Efectes de la degradaci\u00f3 de l&#8217;\u00f2xid de porta en MOSFETs nanom\u00e8trics: Modelat SPICE i impacte en circuits<\/a><\/span>. <span class=\"revista\"><\/span>  <\/li><li><span class=\"any\">2007<\/span>, Mario Lanza. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/avaluacio-de-les-prestacions-electriques-diferents-dielectrics-high-k-amb-cafm\/\">Avaluaci\u00f3 de les prestacions el\u00e8ctriques diferents diel\u00e8ctrics high-k amb CAFM<\/a><\/span>. <span class=\"revista\"><\/span>  <\/li><\/ul><h2>2006<\/h2><ul class='bibliografia'><li><span class=\"any\">2006<\/span>, L. Aguilera, X. Aymerich, M. Nafr\u00eda, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/charge-trapping-and-degradation-hfo2sio2-mos-gate-stacks-observed-enhanced-cafm\/\">Charge trapping and degradation of HfO2\/SiO2 MOS gate stacks observed with Enhanced CAFM<\/a><\/span>. <span class=\"revista\">IEEE Electron Device Letters<\/span> 27 157-159<\/li><li><span class=\"any\">2006<\/span>, R. Fern\u00e1ndez, G. Groeseneken, M. Nafr\u00eda, R. Rodr\u00edguez, S. Demuynck, A. Nackaerts, y B. Kaczer. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/ac-nbti-studied-1-hz-2-ghz-range-dedicated-chip-cmos-circuits\/\">AC NBTI studied in the 1 Hz \u2013 2 GHz range on dedicated on-chip CMOS circuits<\/a><\/span>. <span class=\"revista\">IEEE Int. Electron Device Meeting (IEDM) Tech. Digest<\/span>  337-340<\/li><li><span class=\"any\">2006<\/span>, R. Fern\u00e1ndez, G. Groeseneken, B. Kaczer, X. Aymerich, M. Nafr\u00eda, y R. Rodr\u00edguez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/finfet-and-mosfet-preliminary-comparison-gate-oxide-reliability\/\">FinFET and MOSFET preliminary comparison of gate oxide reliability<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 46 1608-1611<\/li><li><span class=\"any\">2006<\/span>, Esteve Amat-Bertran. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/efecte-de-la-capa-interficial-de-sio2-en-la-degradacio-dielectrica-de-stacks-de-hfo2sio2-en\/\">Efecte de la capa interficial de SiO2 en la degradaci\u00f3 diel\u00e8ctrica de stacks de HfO2\/SiO2 en dispositius MOS sotmesos a estressos est\u00e0tics i din\u00e0mics<\/a><\/span>. <span class=\"revista\"><\/span>  <\/li><\/ul><h2>2005<\/h2><ul class='bibliografia'><li><span class=\"any\">2005<\/span>, R. Fern\u00e1ndez, X. Aymerich, M. Nafr\u00eda, y R. Rodr\u00edguez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/new-approach-modelling-oxide-breakdown-cmos-circuits\/\">A new approach to the modelling of oxide breakdown on CMOS circuits<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 44 1519-1522<\/li><li><span class=\"any\">2005<\/span>, L. Aguilera, X. Aymerich, M. Nafr\u00eda, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/pre-and-post-bd-electrical-conduction-stressed-hfo2sio2-mos-gate-stacks-observed-nanoscale\/\">Pre- and post-BD electrical conduction of stressed HfO2\/SiO2 MOS gate stacks observed at the nanoscale<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 45 1390-1393<\/li><li><span class=\"any\">2005<\/span>, R. Fern\u00e1ndez, X. Aymerich, M. Nafr\u00eda, y R. Rodr\u00edguez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/dc-bd-mosfet-model-circuit-reliability-simulation\/\">DC BD MOSFET model for circuit reliability simulation<\/a><\/span>. <span class=\"revista\">Electronic Letters<\/span> 41 368-370<\/li><li><span class=\"any\">2005<\/span>, R. Fern\u00e1ndez, X. Aymerich, M. Nafr\u00eda, y R. Rodr\u00edguez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/influence-oxide-breakdown-position-and-device-aspect-ratio-mosfets-output-characteristics\/\">Influence of oxide breakdown position and device aspect ratio on MOSFET\u2019s output characteristics<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 45\/5-6 861-864<\/li><li><span class=\"any\">2005<\/span>, M. Porti, B. Garrido, J. Carreras, X. Aymerich, M. Nafr\u00eda, y M. Avidano. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/conduction-mechanisms-and-charge-storage-si-nanocrystals-mos-memory-devices-studied-conducti\/\">Conduction mechanisms and charge storage in Si-nanocrystals MOS memory devices studied with Conductive Atomic Force Microscopy<\/a><\/span>. <span class=\"revista\">Journal of Applied Physics<\/span> 98(5) <\/li><li><span class=\"any\">2005<\/span>, M. Porti, X. Aymerich, M. Nafr\u00eda, y S. Meli. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/new-insights-post-bd-conduction-mos-devices-nanoscale\/\">New insights on the post-BD conduction of MOS devices at the nanoscale<\/a><\/span>. <span class=\"revista\">IEEE Electron Device Letters<\/span> 26 (2) 109-111<\/li><li><span class=\"any\">2005<\/span>, M. Porti, S. Cimino, A. Paccagnella, A. Cester, X. Aymerich, y M. Nafr\u00eda. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/electrical-characterization-nanometer-scale-weak-spots-irradiated-sio2-gate-oxides\/\">Electrical characterization at a nanometer scale of weak spots in irradiated SiO2 gate oxides<\/a><\/span>. <span class=\"revista\">IEEE Transactions on Nuclear Science<\/span> 52 (5) 1457\u20131461<\/li><li><span class=\"any\">2005<\/span>, M. Porti, S. Cimino, A. Paccagnella, A. Cester, X. Aymerich, y M. Nafr\u00eda. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/irradiation-induced-weak-spots-sio2-gate-oxides-mos-devices-observed-c-afm\/\">Irradiation induced weak spots in SiO2 gate oxides of MOS devices observed with C-AFM<\/a><\/span>. <span class=\"revista\">Electronics letters<\/span> 41 (2) 101-103<\/li><li><span class=\"any\">2005<\/span>, M. Porti, B. Garrido, J. Carreras, X. Aymerich, M. Nafr\u00eda, y M. Avidano. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanoscale-approach-electrical-properties-mos-memory-devices-si-nanocrystals\/\">A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals<\/a><\/span>. <span class=\"revista\">Microelectronic Engineering<\/span> 80 268-271<\/li><li><span class=\"any\">2005<\/span>, X. Blasco, X. Aymerich, y M. Nafr\u00eda. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/enhanced-electrical-performance-conductive-atomic-force-microscopy\/\">Enhanced electrical performance for conductive atomic force microscopy<\/a><\/span>. <span class=\"revista\">Review of Scientific Instruments<\/span> 76 (1) <\/li><li><span class=\"any\">2005<\/span>, X. Blasco, W. Vandervorst, J. P\u00e9try, X. Aymerich, y M. Nafr\u00eda. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanoscale-post-breakdown-conduction-hfo2sio2-mos-gate-stacks-studied-enhanced-cafm\/\">Nanoscale post-breakdown conduction of HfO2\/SiO2 MOS gate stacks studied by Enhanced-CAFM<\/a><\/span>. <span class=\"revista\">IEEE Transactions on Electron Devices<\/span> 52 2817-2819<\/li><li><span class=\"any\">2005<\/span>, X. Blasco, W. Vandervorst, J. P\u00e9try, X. Aymerich, M. Nafr\u00eda, y M. Porti. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/electrical-characterization-high-dielectric-constantsio2-metal-oxide-semiconductor-gate-stac\/\">Electrical characterization of high-dielectric-constant\/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope<\/a><\/span>. <span class=\"revista\">Nanotechnology<\/span> 16 1506-1511<\/li><li><span class=\"any\">2005<\/span>, X. Blasco, W. Vandervorst, X. Aymerich, y M. Nafr\u00eda. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/comparison-sio2-and-hfo2sio2-gate-stacks-electrical-behaviour-nanometer-scale-cafm\/\">Comparison of SiO2 and HfO2\/SiO2 gate stacks electrical behaviour at a nanometer scale with CAFM<\/a><\/span>. <span class=\"revista\">Electronic Letters<\/span> 41 719-721<\/li><li><span class=\"any\">2005<\/span>, Lidia Aguilera-Mart\u00ednez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/propietats-electriques-escala-nanometrica-de-dispositius-mos-amb-dielectrics-de-porta-basats\/\">Propietats el\u00e8ctriques a escala nanom\u00e8trica de dispositius MOS amb diel\u00e8ctrics de porta basats en Hafni<\/a><\/span>. <span class=\"revista\"><\/span>  <\/li><li><span class=\"any\">2005<\/span>, Xavier Blasco-Jim\u00e9nez. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/caracterizacio-electrica-de-dielectrics-de-porta-de-dispositius-mos-amb-c-afm-sio2-i-dielect\/\">Caracterizaci\u00f3 el\u00e8ctrica de diel\u00e8ctrics de porta de dispositius MOS amb C-AFM: SiO2 i diel\u00e8ctrics d&#8217;alta permitivitat<\/a><\/span>. <span class=\"revista\"><\/span>  <\/li><\/ul><h2>2004<\/h2><ul class='bibliografia'><li><span class=\"any\">2004<\/span>, M. Porti, X. Aymerich, M. Nafr\u00eda, y S. Meli. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/standard-and-c-afm-tests-study-post-bd-gate-oxide-conduction-mos-devices-after-current-limit\/\">Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses<\/a><\/span>. <span class=\"revista\">Microelectronics Reliability<\/span> 44 1523-28<\/li><li><span class=\"any\">2004<\/span>, M. Porti, X. Aymerich, y M. Nafr\u00eda. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/impact-conductivity-and-size-breakdown-spot-progressive-breakdown-thin-sio2-gate-oxides\/\">Impact of conductivity and size of the breakdown spot on the progressive-breakdown of thin SiO2 gate oxides<\/a><\/span>. <span class=\"revista\">Microelectronic Engineering<\/span> 72 (1-4) 29-33<\/li><li><span class=\"any\">2004<\/span>, M. Porti, X. Aymerich, y M. Nafr\u00eda. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/nanometer-scale-analysis-current-limited-stresses-impact-sio2-gate-oxide-reliability-using-c\/\">Nanometer-scale analysis of current limited stresses impact on SiO2 gate oxide reliability using C-AFM<\/a><\/span>. <span class=\"revista\">IEEE Transactions on Nanotechnology<\/span> 3(1) 55-60<\/li><li><span class=\"any\">2004<\/span>, X. Blasco, W. Vandervorst, O. Richard, X. Aymerich, M. Nafr\u00eda, y J.P\u00e9try. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/c-afm-characterization-dependence-hfalox-electrical-behavior-post-deposition-annealing-tempe\/\">C-AFM Characterization of the Dependence of HfAlOx Electrical Behavior on Post Deposition Annealing Temperature<\/a><\/span>. <span class=\"revista\">Microelectronic Engineering<\/span> 72 (1-4) 191-196<\/li><li><span class=\"any\">2004<\/span>, Ra\u00fal Fern\u00e1ndez-Garc\u00eda. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/ruptura-dielectrica-del-sio2-en-el-nmosfet-modelat-dc-i-efecte-en-circuits-digitals-cmos\/\">Ruptura diel\u00e8ctrica del SiO2 en el nMOSFET: modelat DC i efecte en circuits digitals CMOS<\/a><\/span>. <span class=\"revista\"><\/span>  <\/li><\/ul><h2>2003<\/h2><ul class='bibliografia'><li><span class=\"any\">2003<\/span>, M. Porti, X. Aymerich, y M. Nafr\u00eda. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/oxide-conductivity-increase-during-progressive-breakdown-sio2-gate-oxides-observed-c-afm\/\">Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM<\/a><\/span>. <span class=\"revista\">Microelectronics &#038; Reliability<\/span> 43\/9-11 1501-1505<\/li><li><span class=\"any\">2003<\/span>, M. Porti, X. Aymerich, M. Nafr\u00eda, y S. Meli. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/pre-breakdown-noise-electrically-stressed-thin-sio2-layers-mos-devices-observed-c-afm\/\">Pre-Breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM<\/a><\/span>. <span class=\"revista\">Microelectronics and Reliability<\/span> 43\/8 1203-1209<\/li><li><span class=\"any\">2003<\/span>, M. Porti, X. Aymerich, M. Nafr\u00eda, y X. Blasco. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/electrical-characterization-and-fabrication-sio2-based-mos-nanoelectronic-devices-atomic-for\/\">Electrical characterization and fabrication of SiO2 based MOS nanoelectronic devices with atomic force microscopy<\/a><\/span>. <span class=\"revista\">Nanotechnology<\/span> 14 584-587<\/li><li><span class=\"any\">2003<\/span>, M. Porti, X. Aymerich, y M. Nafr\u00eda. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/current-limited-stresses-sio2-gate-oxides-conductive-atomic-force-microscope\/\">Current limited stresses of SiO2 gate oxides with Conductive Atomic Force Microscope<\/a><\/span>. <span class=\"revista\">EEE Transactions on Electron Devices<\/span> 50 933-940<\/li><li><span class=\"any\">2003<\/span>, M. Porti, S. Sadewasser, X. Aymerich, M. C. Bl\u00fcm, y M. Nafr\u00eda. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/atomic-force-microscope-topographical-artifacts-after-dielectric-breakdown-ultrathin-sio2-fi\/\">Atomic Force Microscope topographical artifacts after the dielectric breakdown of ultrathin SiO2 films<\/a><\/span>. <span class=\"revista\">Surface Science<\/span> 532-535 727-731<\/li><li><span class=\"any\">2003<\/span>, X. Blasco, X. Aymerich, y M. Nafr\u00eda. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/ultra-thin-films-atomic-force-microscopy-grown-sio2-gate-oxide-mos-structures-conduction-and\/\">Ultra Thin Films of Atomic Force Microscopy Grown SiO2 as Gate Oxide on MOS Structures: Conduction and Breakdown Behavior<\/a><\/span>. <span class=\"revista\">Surface Science<\/span> 532-535 732-736<\/li><li><span class=\"any\">2003<\/span>, Marc Porti-Pujal. <span class=\"titol\"><a href=\"https:\/\/webs.uab.cat\/redec\/es\/biblio\/caracterizacio-escala-nanometrica-de-la-degradacio-i-ruptura-dielectrica-del-sio2-en-disposi\/\">Caracterizaci\u00f3 a escala nanom\u00e8trica de la degradaci\u00f3 i ruptura diel\u00e8ctrica del SiO2 en dispositius MOS mitjan\u00e7ant C-AFM<\/a><\/span>. <span class=\"revista\"><\/span>  <\/li><\/ul>","protected":false},"excerpt":{"rendered":"<p>El resultat de la recerca duta a terme per REDEC es reflecteix en un ampli nombre de publicacions a congressos i revistes de l\u2019\u00e0rea, aix\u00ed com tesis doctorals. Seguidament, es proporciona el llistat complet, classificat per any de publicaci\u00f3. Si es desitja m\u00e9s informaci\u00f3 sobre els articles, confer\u00e8ncies i tesis, no dubti en posar-se en [&hellip;]<\/p>\n","protected":false},"author":20,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-1072","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/webs.uab.cat\/redec\/es\/wp-json\/wp\/v2\/pages\/1072","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/webs.uab.cat\/redec\/es\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/webs.uab.cat\/redec\/es\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/webs.uab.cat\/redec\/es\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/webs.uab.cat\/redec\/es\/wp-json\/wp\/v2\/comments?post=1072"}],"version-history":[{"count":2,"href":"https:\/\/webs.uab.cat\/redec\/es\/wp-json\/wp\/v2\/pages\/1072\/revisions"}],"predecessor-version":[{"id":1075,"href":"https:\/\/webs.uab.cat\/redec\/es\/wp-json\/wp\/v2\/pages\/1072\/revisions\/1075"}],"wp:attachment":[{"href":"https:\/\/webs.uab.cat\/redec\/es\/wp-json\/wp\/v2\/media?parent=1072"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}