{"id":267,"date":"2011-05-24T15:55:28","date_gmt":"2011-05-24T13:55:28","guid":{"rendered":"https:\/\/webs.uab.cat\/redec\/biblio\/reliability-sio2-and-high-k-gate-insulators-nanoscale-study-conductive-afm\/"},"modified":"2011-05-24T15:55:28","modified_gmt":"2011-05-24T13:55:28","slug":"reliability-sio2-and-high-k-gate-insulators-nanoscale-study-conductive-afm","status":"publish","type":"biblio","link":"https:\/\/webs.uab.cat\/redec\/biblio\/reliability-sio2-and-high-k-gate-insulators-nanoscale-study-conductive-afm\/","title":{"rendered":"Reliability of SiO2 and high-k gate insulators: a nanoscale study with conductive-AFM"},"content":{"rendered":"","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":0,"template":"","class_list":["post-267","biblio","type-biblio","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/biblio\/267","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/biblio"}],"about":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/types\/biblio"}],"author":[{"embeddable":true,"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/users\/20"}],"wp:attachment":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/media?parent=267"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}