{"id":283,"date":"2011-05-24T16:26:27","date_gmt":"2011-05-24T14:26:27","guid":{"rendered":"https:\/\/webs.uab.cat\/redec\/biblio\/comparison-sio2-and-hfo2sio2-gate-stacks-electrical-behaviour-nanometer-scale-cafm\/"},"modified":"2011-05-24T16:26:27","modified_gmt":"2011-05-24T14:26:27","slug":"comparison-sio2-and-hfo2sio2-gate-stacks-electrical-behaviour-nanometer-scale-cafm","status":"publish","type":"biblio","link":"https:\/\/webs.uab.cat\/redec\/biblio\/comparison-sio2-and-hfo2sio2-gate-stacks-electrical-behaviour-nanometer-scale-cafm\/","title":{"rendered":"Comparison of SiO2 and HfO2\/SiO2 gate stacks electrical behaviour at a nanometer scale with CAFM"},"content":{"rendered":"","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":0,"template":"","class_list":["post-283","biblio","type-biblio","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/biblio\/283","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/biblio"}],"about":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/types\/biblio"}],"author":[{"embeddable":true,"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/users\/20"}],"wp:attachment":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/media?parent=283"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}