{"id":349,"date":"2011-05-25T11:24:30","date_gmt":"2011-05-25T09:24:30","guid":{"rendered":"https:\/\/webs.uab.cat\/redec\/biblio\/reversible-dielectric-breakdown-thin-gate-oxides-mos-devices\/"},"modified":"2011-05-25T11:24:30","modified_gmt":"2011-05-25T09:24:30","slug":"reversible-dielectric-breakdown-thin-gate-oxides-mos-devices","status":"publish","type":"biblio","link":"https:\/\/webs.uab.cat\/redec\/biblio\/reversible-dielectric-breakdown-thin-gate-oxides-mos-devices\/","title":{"rendered":"Reversible dielectric breakdown of thin gate oxides in MOS devices"},"content":{"rendered":"","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":0,"template":"","class_list":["post-349","biblio","type-biblio","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/biblio\/349","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/biblio"}],"about":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/types\/biblio"}],"author":[{"embeddable":true,"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/users\/20"}],"wp:attachment":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/media?parent=349"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}