{"id":351,"date":"2011-06-28T17:09:04","date_gmt":"2011-06-28T15:09:04","guid":{"rendered":"https:\/\/webs.uab.cat\/redec\/biblio\/injected-charge-recovery-parameter-characterize-breakdown-reversibility-ultrathin-hfsion-gat\/"},"modified":"2011-06-28T17:09:04","modified_gmt":"2011-06-28T15:09:04","slug":"injected-charge-recovery-parameter-characterize-breakdown-reversibility-ultrathin-hfsion-gat","status":"publish","type":"biblio","link":"https:\/\/webs.uab.cat\/redec\/biblio\/injected-charge-recovery-parameter-characterize-breakdown-reversibility-ultrathin-hfsion-gat\/","title":{"rendered":"Injected Charge to Recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric"},"content":{"rendered":"","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":0,"template":"","class_list":["post-351","biblio","type-biblio","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/biblio\/351","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/biblio"}],"about":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/types\/biblio"}],"author":[{"embeddable":true,"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/users\/20"}],"wp:attachment":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/media?parent=351"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}