{"id":355,"date":"2011-10-24T13:13:12","date_gmt":"2011-10-24T11:13:12","guid":{"rendered":"https:\/\/webs.uab.cat\/redec\/biblio\/trapped-charge-and-stress-induced-leakage-current-silc-tunnel-sio2-layers-de-processed-mos-n\/"},"modified":"2011-10-24T13:13:12","modified_gmt":"2011-10-24T11:13:12","slug":"trapped-charge-and-stress-induced-leakage-current-silc-tunnel-sio2-layers-de-processed-mos-n","status":"publish","type":"biblio","link":"https:\/\/webs.uab.cat\/redec\/biblio\/trapped-charge-and-stress-induced-leakage-current-silc-tunnel-sio2-layers-de-processed-mos-n\/","title":{"rendered":"Trapped Charge and Stress Induced Leakage Current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale"},"content":{"rendered":"","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":0,"template":"","class_list":["post-355","biblio","type-biblio","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/biblio\/355","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/biblio"}],"about":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/types\/biblio"}],"author":[{"embeddable":true,"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/users\/20"}],"wp:attachment":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/media?parent=355"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}