{"id":358,"date":"2011-10-24T16:12:37","date_gmt":"2011-10-24T14:12:37","guid":{"rendered":"https:\/\/webs.uab.cat\/redec\/biblio\/conductive-afm-analysis-trapping-properties-sio2-tunnel-layers-non-volatile-memory-devices\/"},"modified":"2011-10-24T16:12:37","modified_gmt":"2011-10-24T14:12:37","slug":"conductive-afm-analysis-trapping-properties-sio2-tunnel-layers-non-volatile-memory-devices","status":"publish","type":"biblio","link":"https:\/\/webs.uab.cat\/redec\/biblio\/conductive-afm-analysis-trapping-properties-sio2-tunnel-layers-non-volatile-memory-devices\/","title":{"rendered":"Conductive AFM analysis of the trapping properties of SiO2 tunnel layers for non-volatile memory devices"},"content":{"rendered":"","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":0,"template":"","class_list":["post-358","biblio","type-biblio","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/biblio\/358","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/biblio"}],"about":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/types\/biblio"}],"author":[{"embeddable":true,"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/users\/20"}],"wp:attachment":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/media?parent=358"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}