{"id":362,"date":"2011-10-24T16:41:47","date_gmt":"2011-10-24T14:41:47","guid":{"rendered":"https:\/\/webs.uab.cat\/redec\/biblio\/reliability-and-gate-conduction-variability-hfo2-based-mos-devices-combined-nanoscale-and-de\/"},"modified":"2011-10-24T16:41:47","modified_gmt":"2011-10-24T14:41:47","slug":"reliability-and-gate-conduction-variability-hfo2-based-mos-devices-combined-nanoscale-and-de","status":"publish","type":"biblio","link":"https:\/\/webs.uab.cat\/redec\/biblio\/reliability-and-gate-conduction-variability-hfo2-based-mos-devices-combined-nanoscale-and-de\/","title":{"rendered":"Reliability and Gate Conduction Variability of HfO2-based MOS Devices: a Combined Nanoscale and Devices Level Study"},"content":{"rendered":"","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":0,"template":"","class_list":["post-362","biblio","type-biblio","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/biblio\/362","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/biblio"}],"about":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/types\/biblio"}],"author":[{"embeddable":true,"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/users\/20"}],"wp:attachment":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/media?parent=362"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}