{"id":197,"date":"2011-05-13T12:59:08","date_gmt":"2011-05-13T10:59:08","guid":{"rendered":"https:\/\/webs.uab.cat\/redec\/equipaments\/"},"modified":"2011-05-13T12:59:08","modified_gmt":"2011-05-13T10:59:08","slug":"equipaments","status":"publish","type":"page","link":"https:\/\/webs.uab.cat\/redec\/equipaments\/","title":{"rendered":"Equipaments"},"content":{"rendered":"<p><strong>REDEC<\/strong> disposa de dos laboratoris totalment equipats per la caracterizaci\u00f3 de dispositius i circuits a nivel macrosc\u00f2pic i nanosc\u00f2pic.<\/p>\n<table border=\"0\">\n<tbody>\n<tr>\n<td>\n<p style=\"font: normal normal normal 13px\/160% Arial, Tahoma, Helvetica, sans-serif;\"><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\"><span style=\"font-size: medium;\"><strong>Laboratori de Caracterizaci\u00f3 Macrosc\u00f2pica<\/strong><\/span><\/span><\/p>\n<p style=\"font-family: Arial, Tahoma, Helvetica, sans-serif; font: normal normal normal 13px\/160% Arial, Tahoma, Helvetica, sans-serif;\"><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\"><span style=\"text-decoration: underline;\"><strong>Equipament:<\/strong><\/span><\/span><\/p>\n<ul>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">4284A Precision LCR Meter<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">4156C Precision Semiconductor Parameter Analyzer<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">4155 Precision Semiconductor Parameter Analyzer<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">K4200 Semiconductor Characterization System amb PGU<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">E5250A Low Leakage switch Mainframe<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">81101A Pulse Generator<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">2431L Oscilloscope<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">Software Metrics Agilent I\/CV<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">SUN Blade 1500<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">T-CAD Synopsis software<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">PCI-GPIB Board<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">HC100 Plotter<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">2 Caixes de Faraday<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">Manual Station Probe Wentworth<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">Semi-Automatic Station Probe Cascade REL-6100<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">TP03010B Termochuck<\/span><\/li>\n<li><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">APC SAI 2200<\/span><\/li>\n<\/ul>\n<p style=\"font-family: Arial, Tahoma, Helvetica, sans-serif; font: normal normal normal 13px\/160% Arial, Tahoma, Helvetica, sans-serif;\"><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">Aquest equipament \u00e9s utilitzat per l&#8217;estudi de l&#8217;impacte dels diferents mecanismes de fallada relacionats amb l&#8217;\u00f2xid de porta de dispositius MOS (degradaci\u00f3 i ruptura diel\u00e8ctrica, Negative Bias Temperature Instability, channel hot carrier degradation) en el funcionament dels dispositius i circuits electr\u00f2nics.<\/span><\/p>\n<p style=\"font-family: Arial, Tahoma, Helvetica, sans-serif; font: normal normal normal 13px\/160% Arial, Tahoma, Helvetica, sans-serif;\"><span style=\"-webkit-border-horizontal-spacing: 0px; -webkit-border-vertical-spacing: 0px;\">&nbsp;<\/span><\/p>\n<\/td>\n<td><span class=\"inline inline-center\"><a href=\"http:\/\/grupsderecerca.uab.cat\/redec\/sites\/grupsderecerca.uab.cat.redec\/files\/images\/lab.jpg\"><img decoding=\"async\" alt=\"\" class=\"image image-_original \" src=\"http:\/\/grupsderecerca.uab.cat\/redec\/sites\/grupsderecerca.uab.cat.redec\/files\/images\/lab.jpg\" width=\"350\" \/><\/a><\/span><\/td>\n<\/tr>\n<tr>\n<td>\n<p style=\"font: normal normal normal 13px\/160% Arial, Tahoma, Helvetica, sans-serif;\"><span style=\"font-size: medium;\"><strong>Laboratori de Caracterizaci\u00f3 Nanosc\u00f2pica<\/strong><\/span><\/p>\n<p style=\"font-family: Arial, Tahoma, Helvetica, sans-serif; font: normal normal normal 13px\/160% Arial, Tahoma, Helvetica, sans-serif;\"><span style=\"text-decoration: underline;\"><strong>Equipament:<\/strong><\/span><\/p>\n<ul>\n<li>4145 Semiconductor Parameter Analyzer<\/li>\n<li>TDS 220 Oscilloscope<\/li>\n<li>Low noise preamplifier FEMTO<\/li>\n<li>Faraday Box<\/li>\n<li>C-AFM (Conductive Atomic Force Microscope) de Nanotec<\/li>\n<li>C-AFM amb ambient controlat de Scientec<\/li>\n<li>ECAFM (Enhaced Conductive Atomic Force Microscope)<\/li>\n<li>AFG5501 Arbitrari Function Generator<\/li>\n<li>TK-C1380 Video Camara<\/li>\n<li>2636 System Sourcemeter<\/li>\n<\/ul>\n<p style=\"font-family: Arial, Tahoma, Helvetica, sans-serif; font: normal normal normal 13px\/160% Arial, Tahoma, Helvetica, sans-serif;\">Aquest equipament \u00e9s utilitzat per caracteritzar el\u00e8ctricament i avaluar la fiabilitat dels dispositius electr\u00f2nics a escala nanom\u00e8trica.<\/p>\n<\/td>\n<td><span class=\"inline inline-center\"><a href=\"http:\/\/grupsderecerca.uab.cat\/redec\/sites\/grupsderecerca.uab.cat.redec\/files\/images\/lab_AFM2.jpg\"><img decoding=\"async\" alt=\"\" class=\"image image-_original \" src=\"http:\/\/grupsderecerca.uab.cat\/redec\/sites\/grupsderecerca.uab.cat.redec\/files\/images\/lab_AFM2.jpg\" width=\"350\" \/><\/a><\/span><\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>REDEC disposa de dos laboratoris totalment equipats per la caracterizaci\u00f3 de dispositius i circuits a nivel macrosc\u00f2pic i nanosc\u00f2pic. Laboratori de Caracterizaci\u00f3 Macrosc\u00f2pica Equipament: 4284A Precision LCR Meter 4156C Precision Semiconductor Parameter Analyzer 4155 Precision Semiconductor Parameter Analyzer K4200 Semiconductor Characterization System amb PGU E5250A Low Leakage switch Mainframe 81101A Pulse Generator 2431L Oscilloscope Software [&hellip;]<\/p>\n","protected":false},"author":20,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-197","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/pages\/197","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/comments?post=197"}],"version-history":[{"count":0,"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/pages\/197\/revisions"}],"wp:attachment":[{"href":"https:\/\/webs.uab.cat\/redec\/wp-json\/wp\/v2\/media?parent=197"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}