Authors R. Fernández, X. Aymerich, M. Nafría, i R. Rodríguez Citation Key 172 COinS Data Date Published 2008 Pagination 259-262 Journal Microelectronic Engineering Volume 85 Year of Publication 2008 ← Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors → Gate oxide wear-out and breakdown effects on the performance of analog and digital circuits