Authors J. Martín-Martínez, J.H. Stathis, X. Aymerich, M. Nafría, i R. Rodríguez Citation Key 213 COinS Data Date Published 2007 Issue 4-5 Pagination 665-668 Journal Microelectronics Reliability Volume 47 Year of Publication 2007 ← Influence of the SiO2 layer thickness on the degradation de HfO2/SiO2 stacks subjected to static and dynamic stress conditions → Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs