Authors X. Blasco, X. Aymerich, i M. Nafría Citation Key 223 COinS Data Date Published 2005 Journal Review of Scientific Instruments Start Page 016105 Volume 76 (1) Year of Publication 2005 ← Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by Enhanced-CAFM → A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals