Authors M. Porti, S. Cimino, A. Paccagnella, A. Cester, X. Aymerich, i M. Nafría Citation Key 225 COinS Data Date Published 2005 Pagination 101-103 Journal Electronics letters Volume 41 (2) Year of Publication 2005 ← A nanoscale approach to the electrical properties of MOS memory devices with Si-nanocrystals → Electrical characterization at a nanometer scale of weak spots in irradiated SiO2 gate oxides