Authors R. Fernández, X. Aymerich, M. Nafría, i R. Rodríguez Citation Key 229 COinS Data Date Published 2005 Pagination 861-864 Journal Microelectronics Reliability Volume 45/5-6 Year of Publication 2005 ← Conduction mechanisms and charge storage in Si-nanocrystals MOS memory devices studied with Conductive Atomic Force Microscopy → DC BD MOSFET model for circuit reliability simulation