Authors M. Porti, X. Aymerich, M. Nafría, i S. Meli Citation Key 235 COinS Data Date Published 2004 Pagination 1523-28 Journal Microelectronics Reliability Volume 44 Year of Publication 2004 ← Impact of conductivity and size of the breakdown spot on the progressive-breakdown of thin SiO2 gate oxides → A new approach to the modelling of oxide breakdown on CMOS circuits