Authors M. Porti, X. Aymerich, i M. Nafría Citation Key 242 COinS Data Date Published 2003 Pagination 1501-1505 Journal Microelectronics & Reliability Volume 43/9-11 Year of Publication 2003 ← Pre-Breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM → Conduction and breakdown behaviour of Atomic Force Microscopy grown SiO2 gate oxide on MOS structures