Authors X. Blasco, X. Aymerich, i M. Nafría Citation Key 243 COinS Data Date Published 2002 Pagination 1513-1516 Journal Microelectronics and Reliability Volume 42 Year of Publication 2002 ← Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM → Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a Conductive Atomic Force Microscope