Authors M. Porti, S. Sadewasser, X. Aymerich, M. C. Blüm, i M. Nafría Citation Key 246 COinS Data Date Published 2002 Pagination 3615-3617 Journal Applied Physics Letters Volume 81/19 Year of Publication 2002 ← Post-breakdown electrical characterization of ultrathin SiO2 films with Conductive Atomic Force Microscopy → Imaging breakdown spots in SiO2 films and MOS devices with a Conductive Atomic Force Microscope